DYNEX DGT304SE13 Datasheet

DGT304SE13

DGT304SE

Gate Turn-off Thyristor

Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC)

■ Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters

FEATURES

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ High Surge Current Capability

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

dV

/dt 500V/µs

D

di

/dt 500A/µs

T

700A

1300V

250A

Outline type code: E.

See Package Details for further information.

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

1300DGT304SE13

Repetitive Peak Reverse Voltage

V

RRM

V

16

ConditionsType Number

= 125oC, IDM = 50mA,

T

vj

= 50mA, VRG = 2V

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

V

= 60%V

D

THS = 80oC. Double side cooled. Half sine 50Hz.

, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF

DRM

250

390

Units

A700

A

1/13

DGT304SE13

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

diT/dt Critical rate of rise of on-state current 500

dVD/dt

Surge (non-repetitive) on-state current

I2t for fusing

Rate of rise of off-state voltage

10ms half sine. Tj = 125oC

10ms half sine. Tj =125oC VD = 60% V

Rise time < 1.0µs To 80% V

DRM

Conditions

, IT = 700A, Tj = 125oC, IFG > 20A,

DRM

; RGK ≤ 1.5Ω, Tj = 125oC

GATE RATINGS

Symbol Parameter Conditions

V

RGM

I

FGM

P

FG(AV)

P

RGM

diGQ/dt

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

This value maybe exceeded during turn-off

Min.

Max. Units

4.0

80000

500 V/µs

-Peak reverse gate voltage

-

10

16

50

10

50

kA

2

s

A

A/µs

UnitsMax.

V

A

W

6

kW

A/µs

t

ON(min)

t

OFF(min)

Minimum permissable on time Minimum permissable off time

THERMAL RATINGS

Symbol Parameter Conditions Max.Min.

Double side cooled

R

th(c-hs)

T

OP/Tstg

th(j-hs)

vj

-

DC thermal resistance - junction to heatsink surface

Contact thermal resistance

Virtual junction temperature

Operating junction/storage temperature range Clamping force

Anode side cooled

Cathode side cooled Clamping force 5.5kN

With mounting compound

per contact

-20

- µs40

Units

- 0.075oC/W

-

- 0.20

- 0.018

-

-40

5.0

125

6.0

o

µs

C/W0.12

C/W

o

C

o

C

kN

2/13

CHARACTERISTICS

= 125oC unless stated otherwise

T

j

DGT304SE13

Symbol Parameter

On-state voltageV

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

I

E

I

RRM

V

I

RGM

t

DM

GT

t

OFF

gs

gf

TM

GT

ON

d

Min. Max. Units

- 2.2 V

-50mA

At 600A peak, I

At = V

At V

, VRG = 2V - 25 mA

DRM

RRM

Conditions

= 2A d.c.

G(ON)

VD = 24V, IT = 100A, Tj = 25oC - 0.9 V

= 24V, IT = 100A, Tj = 25oC - 1.0 A

V

D

V

= 16V, No gate/cathode resistor

RGM

= 900V, IT = 600A, dIT/dt = 300A/µs

D

50-

mA

mJ130-V IFG = 20A, rise time < 1.0µs RL = (Residual inductance 3µH)

- 3.0 µs

- 350 mJ

=600A, VDM = 750V

I

T

-10µs

Snubber Cap Cs = 1.5µF,

µs1.5-

µs11-

t

gq

Q

GQ

Q

GQT

Gate controlled turn-off time

Turn-off gate charge Total turn-off gate charge

diGQ/dt = 15A/µs RL = (Residual inductance 3µH)

- 700

- 1400 µC

µs0.9-

µC

3/13

DGT304SE13

CURVES

Fig.1 Gate characteristics

Fig.3 Dependence of I

TCM

on C

Fig.2 Maximum (limit) on-state characteristics

S

Fig.4 Maximum (limit) transient thermal resistance

Fig.5 Surge (non-repetitive) on-state current vs time

4/13