DYNEX DGT304RE13 Datasheet
DGT304RE
DGT304RE
Reverse Blocking Gate Turn-off Thyristor
DS5518-2.1 February 2002
FEATURES
■ Reverse Blocking Capability
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
KEY PARAMETERS
I
TCM
V
DRM/VRRM
I
T(AV)
dV
/dt 500V/µs
D
di
/dt 500A/µs
T
(See Package Details for further information)
700A
1300V
250A
Outline type code: E
VOLTAGE RATINGS
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Repetitive Peak Off-state
Voltage
V
DRM
V
1300DGT304RE13
Fig. 1 Package outline
Repetitive Peak Reverse Voltage
V
RRM
V
1300
ConditionsType Number
= 125oC, IDM = 50mA,
T
vj
= 50mA, VRG = 2V
I
RRM
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DGT304RE
CURRENT RATINGS
Symbol Parameter Conditions Max.
I
TCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current
Mean on-state current
RMS on-state current A
V
= 60%V
D
, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF
DRM
THS = 80oC. Double side cooled. Half sine 50Hz.
THS = 80oC. Double side cooled. Half sine 50Hz.
SURGE RATINGS
Symbol Parameter
I
TSM
2
I
diT/dt Critical rate of rise of on-state current 500
dV
D
Surge (non-repetitive) on-state current
t
/dt
2
I
t for fusing
Rate of rise of off-state voltage
10ms half sine. Tj = 125oC
10ms half sine. T
VD = 60% V
Rise time < 1.0µs
To 80% V
DRM
DRM
Conditions
=125oC
j
, IT = 700A, Tj = 125oC, IFG > 20A,
; RGK ≤ 1.5Ω, Tj = 125oC
GATE RATINGS
Symbol Parameter Conditions
Min.
Units
A700
250
A
390
Max. Units
4.0
80000
kA
A2s
A/µs
500 V/µs
UnitsMax.
V
RGM
I
FGM
P
FG(AV)
P
RGM
diGQ/dt
t
ON(min)
t
OFF(min)
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
This value maybe exceeded during turn-off
10
-Peak reverse gate voltage
-
-
-
16
50
10
6
50
-20
V
A
W
kW
A/µs
µs
- µs40
2/14
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THERMAL RATINGS
DGT304RE
Symbol Parameter Conditions Max.Min.
Double side cooled
R
th(j-hs)
DC thermal resistance - junction to heatsink
surface
Anode side cooled
Cathode side cooled
R
th(c-hs)
T
T
OP/Tstg
Contact thermal resistance
Virtual junction temperature
vj
Clamping force 5.5kN
With mounting compound
Operating junction/storage temperature range
-
Clamping force
per contact
CHARACTERISTICS
T
= 125oC unless stated otherwise
j
Symbol Parameter
TM
On-state voltageV
At 600A peak, I
Conditions
= 2A d.c.
G(ON)
Units
- 0.075
-
- 0.20
- 0.018
-
-40
5.0
125
125
6.0
o
C/W
o
C/W0.12
o
C/W
o
C/W
o
o
kN
C
C
Min. Max. Units
- 2.2 V
I
E
Q
I
RRM
V
I
I
RGM
E
t
t
t
DM
GT
GT
ON
t
d
t
OFF
gs
gf
gq
GQ
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
r
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
At = V
At V
, VRG = 2V - 25 mA
DRM
RRM
-50mA
VD = 24V, IT = 100A, Tj = 25oC - 0.9 V
VD = 24V, IT = 100A, Tj = 25oC - 1.0 A
= 16V, No gate/cathode resistor
V
RGM
= 900V, IT = 600A, dIT/dt = 300A/µs
D
IFG = 20A, rise time < 1.0µs
RL = (Residual inductance 3µH)
50-
- 3.0 µs
mA
mJ130-V
µs1.5-
- 350 mJ
IT =600A, VDM = 750V
Snubber Cap Cs = 1.5µF,
diGQ/dt = 15A/µs
RL = (Residual inductance 3µH)
-10µs
µs11-
µs0.9-
- 700
µC
Q
GQT
Total turn-off gate charge
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- 1400 µC
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DGT304RE
CURVES
Fig.2 Gate characteristics
Fig.4 Dependence of I
TCM
on C
Fig.3 Maximum (limit) on-state characteristics
S
Fig.5 Maximum (limit) transient thermal resistance
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Fig.6 Surge (non-repetitive) on-state current vs time
DGT304RE
Fig.7 Steady state rectangulerwave conduction loss - double side cooled
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