DYNEX DG858DW45 Datasheet
DG858DW45
DG858DW45
Gate Turn-Off Thyristor
Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000
FEATURES
● Double Side Cooling
● High Reliability In Service
● High Voltage Capability
● Fault Protection Without Fuses
● High Surge Current Capability
● Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
● Variable speed A.C. motor drive inverters (VSD-AC).
● Uninterruptable Power Supplies
● High Voltage Converters.
● Choppers.
● Welding.
● Induction Heating.
● DC/DC Converters.
VOLTAGE RATINGS
KEY PARAMETERS
I
TCM
V
DRM
I
T(AV)
dV
/dt 750V/µs
D
dI
/dt 300A/µs
T
Package outline type code : W
See Package Details for further information.
Fig.1 Package outline
3000A
4500V
1100A
Repetitive Peak Off-state
Voltage
V
DRM
V
4500DG858DW45
Repetitive Peak Reverse
Voltage
V
RRM
V
16
Tvj = 125oC, I
ConditionsType Number
I
RRM
= 50mA
CURRENT RATINGS
Symbol Parameter Conditions Max.
I
TCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current
Mean on-state current
VD = V
Cs = 4.0µF, LS ≤ 200nH
THS = 80oC. Double side cooled, half sine 50Hz.
THS = 80oC. Double side cooled, half sine 50Hz.RMS on-state current A
, Tj = 125oC, diGQ/dt = 40A/µs,
DRM
DRM
1720
=100mA,
Units
A3000
A1100
1/7
DG858DW45
SURGE RATINGS
Symbol Parameter
I
TSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
diT/dt Critical rate of rise of on-state current 300
dVD/dt
L
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
S
10ms half sine. Tj = 125oC
10ms half sine. Tj =125oC
VD = 3000V, IT = 3000A, Tj =125oC
IFG > 40A, Rise time < 1.0µs
To 66% V
To 66% V
DRM
DRM
IT = 3000A, VD = V
diGQ/dt = 40A/µs, Cs = 4.0µF
Conditions
; RGK ≤ 22Ω, Tj = 125oC
; VRG = -2V, Tj = 125oC
, Tj = 125˚C,
DRM
GATE RATINGS
Symbol Parameter Conditions
V
I
P
RGM
FGM
FG(AV)
Peak forward gate current
Average forward gate power
This value maybe exceeded during turn-off
Min.
20
Max. Units
20.0
2.0 x 10
20
750 V/µs
200 nH
16
-Peak reverse gate voltage
100
20
-
kA
6
A2s
A/µs
V/µs
UnitsMax.
V
A
W
P
RGM
diGQ/dt
t
ON(min)
t
OFF(min)
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Max.Min.
Double side cooled
R
th(j-hs)
R
th(c-hs)
T
TOP/T
DC thermal resistance - junction to
heatsink surface
Contact thermal resistance
Virtual junction temperature
vj
Operating junction/storage temperature range
stg
Anode side cooled
Cathode side cooled
Clamping force 40kN
With mounting compound
per contact
24
-
20
60
A/µs
-50
- µs100
Units
- 0.011oC/W
-
- 0.03
- 0.0021
-40
-40
125
125
o
C/W0.017
o
C/W
o
C/W
kW
µs
o
C
o
C
2/7
-
Clamping force
36.0
44.0
kN
CHARACTERISTICS
Tj = 125oC unless stated otherwise
DG858DW45
Symbol Parameter
On-state voltageV
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
r
Turn-off energy
Storage time
Fall time
I
V
I
E
E
I
DM
RRM
I
GT
RGM
t
t
OFF
t
gs
t
TM
GT
ON
d
gf
Conditions
At 3000A peak, I
V
= 4500V, VRG = 2V - 100 mA
DRM
At V
RRM
V
= 24V, IT = 100A, Tj = 25oC
D
= 10A d.c.
G(ON)
Min.
Max. Units
3.85
-
-50mA
- 1.2 V
VD = 24V, IT = 100A, Tj = 25oC - 4.0 A
-
V
= 16V, No gate/cathode resistor
RGM
50
mA
mJ4400-VD = 2000V
IT = 3000A, dIT/dt = 300A/µs
IFG = 40A, rise time < 1.0µs
- 6.0 µs
µs2.0-
- 12500 mJ
-26µs
IT = 3000A, VDM = 4200V
µs2.5-
V
Q
Q
I
t
gq
GQ
GQT
GQM
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
RELIABILITY
DC blocking reliability
Snubber Cap Cs = 4.0µF,
diGQ/dt = 40/µs
Conditions Limit
Vdc = 3500V, Tj = -40 to + 125˚C,
ambient cosmic radiation at sea level, in
open air, 100% duty cycle.
µs28.5-
- 12500
µC
- 25000 µC
- 950 A
Units
100 FIT
3/7
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