DYNEX DG858BW45 Datasheet

DG858BW45

Gate Turn-off Thyristor

Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000

FEATURES

● Double Side Cooling

● High Reliability In Service

● High Voltage Capability

● Fault Protection Without Fuses

● High Surge Current Capability

● Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements

APPLICATIONS

● Variable speed A.C. motor drive inverters (VSD-AC)

● Uninterruptable Power Supplies

● High Voltage Converters

● Choppers

● Welding

● Induction Heating

● DC/DC Converters

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

dVD/dt 1000V/µs diT/dt 300A/µs

Package outline type code: W.

See Package Details for further information.

Figure 1. Package outline

3000A

4500V

1180A

VOLTAGE RATINGS

DG858BW45

Repetitive Peak

Off-state Voltage

V

DRM

V

4500

Repetitive Peak Reverse

Voltage

V

RRM

V

16

ConditionsType Number

Tvj = 125oC, IDM = 100mA,

I

= 50mA

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current Mean on-state current RMS on-state current A

VD = 66% V

, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF

DRM

THS = 80oC. Double side cooled, half sine 50Hz THS = 80oC. Double side cooled, half sine 50Hz

1180 1850

Units

A3000 A

1/19

DG858BW45

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

diT/dt Critical rate of rise of on-state current 300

dVD/dt

L

Surge (non-repetitive) on-state current I2t for fusing

Rate of rise of off-state voltage

Peak stray inductance in snubber circuit

S

10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC

VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0µs

To 66% V To 66% V

DRM

IT = 3000A, VD = V µs, Cs = 3.0µF

Conditions

; RGK ≤ 1.5Ω, Tj = 125oC ; VRG = -2V, Tj = 125oC

, Tj = 125˚C, dI/GQ = 40A/

-

DRM

-

GATE RATINGS

Symbol Parameter

V

P

RGM

I

FGM

FG(AV)

Peak reverse gate voltage Peak forward gate current Average forward gate power

This value maybe exceeded during turn-off

Conditions

Min.

20

Max. Units

20.0

2.0 x 10

130

1000 V/µs

200 nH

Max.

-

16

100

20

-

6

kA

A2s

A/µs

V/µs

Units

V

A

W

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

Peak reverse gate power Rate of rise of reverse gate current

Minimum permissable on time Minimum permissable off time

-

20

THERMAL AND MECHANICAL DATA

Symbol Parameter Conditions Max.

Double side cooled

R

th(j-hs)

DC thermal resistance - junction to

Anode side cooled

heatsink surface

Cathode side cooled

R

th(c-hs)

T

TOP/T

Contact thermal resistance

Virtual junction temperature

vj

Operating junction/storage temperature range

stg

Clamping force 40.0kN With mounting compound

per contact

Min.

- 0.011oC/W

-

- 0.03

- 0.0021

-40

24 60

-50

- µs100

125 125

kW

A/µs

µs

Units

o

C/W0.017

o

C/W

o

C/W

o

C

o

C

2/19

-

Clamping force

36.0

44.0

kN

CHARACTERISTICS

Tj = 125oC unless stated otherwise

DG858BW45

Symbol

TM

I

DM

I

RRM

V

GT

I

GT

I

RGM

E

ON

t

d

t

r

E

OFF

t

gs

t

gf

Parameter

On-state voltageV Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current Reverse gate cathode current Turn-on energy Delay time

Rise time

Turn-off energy Storage time Fall time

Conditions

At 4000A peak, I V

= 4500V, VRG = 0V - 100 mA

DRM

At V

RRM

V

= 24V, IT = 100A, Tj = 25oC - 1.2 V

D

= 10A d.c.

G(ON)

Min. Max. Units

- 4.0 V

-50mA

VD = 24V, IT = 100A, Tj = 25oC - 4.0 A V

= 16V, No gate/cathode resistor

RGM

50-

mA

mJ2700-VD = 2000V IT = 3000A, dIT/dt = 300A/µs IFG = 40A, rise time < 1.0µs

- 6.0 µs

13500

-

µs2.0-

mJ

- 25.0 µs

IT = 3000A, VDM = V

DRM

µs2.5-

Q

I

t

gq

GQ

GQT

GQM

Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current

Snubber Cap Cs = 3.0µF, diGQ/dt = 40A/µs

µs27.5-

- 12000

µC

- 24000 µC

- 950 A

3/19

DG858BW45

CURVES

2.5

2.0

12.5

10.0

Gate trigger current I

- (V)

GT

1.5

1.0

7.5

5.0

GT

- (A)

V

125

GT

2.5

I

GT

0

150

Gate trigger voltage V

0.5

0

-50 -25 0 25 50

75

100

Junction temperature Tj - (˚C)

Figure 2. Maximum gate trigger voltage/current vs junction temperature

4000

Measured under pulse conditions. I

= 10A

G(ON)

- (A)

T

3000

Half sine wave 10ms

2000

1000

Instantaneous on-state current I

0

1.5 2.0 2.5 3.0 3.5

Tj = 25˚C

Instantaneous on-state voltage V

Figure 3. On-state characteristics

TM

- (V)

Tj = 125˚C

4.01.0

4/19

DG858BW45

0.015

0.010

4000

Conditions:

= 125˚C,

T

3500

j

= V

V

DM

DRM

dIGQ/dt = 40A/µs

3000

- (A)

TCM

2500

2000

current I

1500

Maximum permissible turn-off

1000

0 2.0 4.0 6.0

1.0 3.0 5.0

Snubber capacitance C

Figure 4. Maximum dependence of I

- (µF)

s

TCM

on Cs

dc

0.005

Thermal impedance - ˚C/W

0

0.001 0.01 0.1

Figure 5. Maximum (limit) transient thermal impedance - double side cooled

50

40

30

20

10

Time - (s)

1.0

10

100

Peak half sine wave on-state current - (kA)

0

0.0001 0.001 0.01 Pulse duration - (s)

Figure 6. Surge (non-repetitive) on-state current vs time

0.1

1.0

5/19

DG858BW45

)

5500

Conditions; I

= 10A

5000

G(ON)

4500

4000

3500

3000

2500

60˚

30˚

120˚

2000

1500

Mean on-state power dissipation - (W)

1000

500

dc

180˚

0

0 500 1000 1500 60 70 80 90 100 110

- (A)

T(AV

Figure 7. Steady state rectangular wave conduction loss - double side cooled

Maximum permissible case temperature - (˚C)Mean on-state current I

4000

180˚

3500

3000

Conditions;

= 10A

I

G(ON)

120˚

90˚

60˚

2500

30˚

2000

1500

1000

Mean on-state power dissipation- (W)

500

120 130

6/19

0

0 400 800 80 90 100

Figure 8. Steady state sinusoidal wave conduction loss - double side cooled

T(AV)

1200 110 120 130200 600 1000

- (A)

Maximum permissible case temperature - (˚C)Mean on-state current I