DYNEX DG758BX45 Datasheet

DG758BX45

DG758BX45

Gate Turn-off Thyristor

Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC).

■ Uninterruptable Power Supplies

■ High Voltage Converters.

■ Choppers.

■ Welding.

■ Induction Heating.

■ DC/DC Converters.

FEATURES

■ Double Side Cooling.

■ High Reliability In Service.

■ High Voltage Capability.

■ Fault Protection Without Fuses.

■ High Surge Current Capability.

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

3000A

4500V

870A
dVD/dt 1000V/µs
diT/dt 300A/µs

Outline type code: X.

See Package Details for further information.

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

4500DG758BX45

Repetitive Peak Reverse Voltage

V

RRM

V

16

ConditionsType Number

Tvj = 125oC, IDM = 100mA,

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

= 66% V

V

D

THS = 80oC. Double side cooled. Half sine 50Hz.

THS = 80oC. Double side cooled. Half sine 50Hz.

, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 6µF

DRM

= 50mA

870

1365

Units

A3000

A

1/19

DG758BX45

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

di

T

Surge (non-repetitive) on-state current

2

t for fusing

I

/dt Critical rate of rise of on-state current 300

10ms half sine. Tj = 125oC

10ms half sine. T
VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A,

Rise time > 1.0µs
To 66% V

DRM

Conditions

=125oC

j

; RGK ≤ 1.5Ω, Tj = 125oC

Rate of rise of off-state voltagedVD/dt

To 66% V

L

S

; VRG = -2V, Tj = 125oC

DRM

-Peak stray inductance in snubber circuit

GATE RATINGS

Symbol Parameter Conditions

V

P

RGM

I

FGM

FG(AV)

Peak forward gate current

Average forward gate power

This value maybe exceeded during turn-off

1.28 x 10

Min.

-Peak reverse gate voltage

-

-

Max. Units

16.0

kA

6

2

s

A

A/µs

100 V/µs

1000 V/µs

200 nH

UnitsMax.

16

100

20

V

A

W

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time
Minimum permissable off time

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Max.Min.

Double side cooled

R

R

th(c-hs)

T

T

OP/Tstg

th(j-hs)

vj

DC thermal resistance - junction to heatsink
surface

Contact thermal resistance

Virtual junction temperature

Operating junction/storage temperature range

Anode side cooled

Cathode side cooled
Clamping force 35.0kN

With mounting compound

per contact

-

30

24

60

- 0.0146

-

- 0.0392

- 0.0036

-40

-40

125

125

kW

A/µs

-50

µs

- µs100

Units

o

C/W

o

C/W0.0233

o

C/W

o

C/W

o

C

o

C

2/19

-

Clamping force

33.0

37.0

kN

CHARACTERISTICS

= 125oC unless stated otherwise

T

j

DG758BX45

Symbol Parameter

On-state voltageV

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

I

V

I

E

E

I

DM

RRM

I

GT

RGM

t

t

OFF

t

gs

t

gf

TM

GT

ON

d

Conditions

At 3000A peak, I

= 4500V, VRG = 0V - 100 mA

V

DRM

At V

RRM

V

= 24V, IT = 100A, Tj = 25oC - 1.2 V

D

V

= 24V, IT = 100A, Tj = 25oC - 3.5 A

D

V

= 16V, No gate/cathode resistor

RGM

= 8A d.c.

G(ON)

Min. Max. Units

- 4.0 V

-50mA

50-

IT = 3000A, dIT/dt = 300A/µs
IFG = 40A, rise time < 1.0µs

- 3.0 µs

- 6300 mJ

- 20.6 µs

= 3000A, VDM = 3000V

I

T

mA

mJ3000-VD = 2250V

µs1.5-

µs2.2-

Q

Q

I

t

gq

GQ

GQT

GQM

Gate controlled turn-off time

Turn-off gate charge
Total turn-off gate charge

Peak reverse gate current

Snubber Cap Cs = 6.0µF,
diGQ/dt = 40A/µs

µs22.8-

- 10000

µC

- 20000 µC

- 830 A

3/19

DG758BX45

CURVES

2.0

8.0

Gate trigger current I

1.5

6.0

- (V)

GT

1.0

4.0

V

GT

GT

- (A)

I

100

GT

2.0

0

125

0.5

Gate trigger voltage V

0

-50 -25 0 25 50

75

Junction temperature Tj - (˚C)

Fig.1 Maximum gate trigger voltage/current vs junction temperature

5000

Measured under pulse
conditions I

G(ON)

= 8A

4000

Tj = 25˚C

3000

Tj = 125˚C

2000

Instantaneous on-state current - (A)

1000

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage - (V)

Fig.2 On-state characteristics

5.5

4/19

0.020

)

3000

2500

2000

- (A)

TCM

1500

1000

current I

500

Maximum permissible turn-off

0

0 1.0 2.0 3.0 4.0 5.0 6.0

Snubber capacitance Cs - (µF)

Fig.3 Maximum dependence of I

Conditions:

= 125˚C,

T

j

V

= 2000V

DM

/dt = 40A/µs

dI

GQ

TCM

on C

DG758BX45

S

0.015

0.010

0.005

Thermal impedance - ˚C/W

0

0.001 0.01 0.1

1.0

Time - s

Fig.4 Maximum (limit) transient thermal impedance - double side cooled

40

30

20

current - (kA)

10

dc

10

Peak half sine wave on-state

0

0.0001 0.001 0.01 0.1 1.0
Pulse duration - (ms

Fig.5 Surge (non-repetitive) on-state current vs time

5/19

DG758BX45

(˚C)

4000

3500

Conditions;

= 8A

I

G(ON)

dc

180˚

3000

120˚

2500

60˚

2000

30˚

1500

1000

Mean on-state power dissipation - (W)

500

0

0 200 400 600 800 1000 1200 1400 6570 80 90 100 110

Mean on-state current - (A)

Maximum permissible case

temperature - (˚C)

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

120 130

3000

2500

Conditions;
I

= 8A

G(ON)

120˚

90˚

180˚

60˚

2000

30˚

1500

1000

500

Mean on-state power dissipation- (W)

0

0 100 200 300 400 500 700 800 900 80 100 120 140

Mean on-state current - (A)

600

Maximum permissible case

temperature -

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

6/19