DYNEX DG648BH45 Datasheet

DG648BH45

Gate Turn-off Thyristor

Replaces March 1998 version, DS4093-2.3 DS4093-3.0 January 2000

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC)

■ Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters

FEATURES

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ High Surge Current Capability

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

2000A

4500V

745A dVD/dt 1000V/µs diT/dt 300A/µs

Outline type code: H.

See Package Details for further information.

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

4500DG648BH45

Repetitive Peak Reverse Voltage

V

RRM

V

16

ConditionsType Number

Tvj = 125oC, IDM = 50mA,

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

= V

V

D

THS = 80oC. Double side cooled. Half sine 50Hz.

, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF

DRM

= 50mA

745

1170

Units

A2000

A

1/19

DG648BH45

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

di

T

Surge (non-repetitive) on-state current

2

t for fusing

I

/dt Critical rate of rise of on-state current 300

10ms half sine. Tj = 125oC

10ms half sine. T VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A,

Rise time > 1.0µs To 66% V

DRM

Conditions

=125oC

j

; RGK ≤ 1.5Ω, Tj = 125oC

Rate of rise of off-state voltagedVD/dt

To 66% V I

= 2000A, VDM = 4500V, Tj = 125˚C,

L

Peak stray inductance in snubber circuit nH200

S

T

diGQ/dt = 40A/µs, Cs = 2.0µF

; VRG = -2V, Tj = 125oC

DRM

-

GATE RATINGS

Symbol Parameter Conditions

V

P

RGM

I

FGM

FG(AV)

Peak forward gate current

Average forward gate power

This value maybe exceeded during turn-off

1.28 x 10

Min.

-Peak reverse gate voltage

20

-

Max. Units

16.0

kA

6

2

s

A

A/µs

175 V/µs

1000 V/µs

UnitsMax.

16

100

15

V

A

W

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time Minimum permissable off time

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Max.Min.

Double side cooled

R

th(c-hs)

T

OP/Tstg

th(j-hs)

vj

DC thermal resistance - junction to heatsink surface

Contact thermal resistance

Virtual junction temperature

Operating junction/storage temperature range

Anode side cooled

Cathode side cooled Clamping force 20.0kN

With mounting compound

per contact

-

30

- 0.018

-

- 0.045

- 0.006

-

-40

19

60

-50

- µs100

125

kW

A/µs

µs

Units

o

C/W

o

C/W0.03

o

C/W

o

C/W

o

C

o

C

2/19

-

Clamping force

18.0

22.0

kN

CHARACTERISTICS

= 125oC unless stated otherwise

T

j

DG648BH45

Symbol Parameter

On-state voltageV

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

I

V

I

E

I

DM

RRM

I

GT

RGM

t

OFF

t

gs

t

gf

TM

GT

ON

d

Conditions

At 2000A peak, I

= 4500V, VRG = 0V - 100 mA

V

DRM

At V

RRM

V

= 24V, IT = 100A, Tj = 25oC - 1.0 V

D

V

= 24V, IT = 100A, Tj = 25oC - 3.0 A

D

V

= 16V, No gate/cathode resistor

RGM

= 7A d.c.

G(ON)

Min. Max. Units

- 3.2 V

-50mA

50-

IT = 2000A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.0µs

- 3.2 µs

- 10000 mJ

- 20.0 µs

= 2000A, VDM = V

I

T

DRM

mA

mJ3170-VD = 3000V

µs1.35-

µs2.0-

Q

I

t

gq

GQ

GQT

GQM

Gate controlled turn-off time

Turn-off gate charge Total turn-off gate charge

Peak reverse gate current

Snubber Cap Cs = 2.0µF, diGQ/dt = 40A/µs

µs22.0-

- 6000

µC

- 12000 µC

- 690 A

3/19

DG648BH45

CURVES

2.0

1.5

8.0

6.0

- (V)

GT

1.0

0.5

Gate trigger voltage V

0

4.0

V

GT

2.0

I

GT

0

-50 -25 0 25 50 75 100 125 150 Junction temperature T

Fig.1 Maximum gate trigger voltage/current vs junction temperature

- (˚C)

j

Gate trigger current I

- (A)

4000

Measured under pulse conditions. I

= 7A

G(ON)

Half sine wave 10ms

- (A)

TM

3000

2000

1000

Instantaneous on-state current I

0

0 1.0 2.0 3.0 4.0 5.0

Instantaneous on-state voltage VTM - (V)

Fig.2 On-state characteristics

Tj = 125˚C

Tj = 25˚C

4/19

3000

Conditions: Tj = 125˚C, VDM = V dIGQ/dt = 40A/µs

2000

- (A)

TCM

1000

current I

Maximum permissible turn-off

0

0 1.0 2.0 3.0 4.0

Fig.3 Maximum dependence of I

0.020

,

DRM

Snubber capacitance C

- (µF)

S

TCM

on C

DG648BH45

S

dc

0.015

0.010

0.005

Thermal impedance - ˚C/W

0

0.001 0.01 0.1

1.0

Time - (s)

Fig.4 Maximum (limit) transient thermal impedance - double side cooled

40

30

20

10

0

Peak half sine wave on-state current - (kA)

0.0001 0.001 0.01 Pulse duration - (s)

Fig.5 Surge (non-repetitive) on-state current vs time

0.1

1.0

5/19

DG648BH45

4000

Conditions: I

= 7A

G(ON)

3000

dc

180˚

120˚

2000

60˚

30˚

1000

Mean on-state power dissipation - (W)

0

0 500 1000 1500 70 80 90 100 120 130

Mean on-state current I

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

T(AV)

- (A) Maximum permissible case temperature - (˚C)

3000

Conditions:

= 7A

I

G(ON)

180˚

2000

120˚

90˚

60˚

30˚

1000

Mean on-state power dissipation - (W)

0

0 400 800 1200 80 90 100 120 130

200 600 1000 1400

Mean on-state current I

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

T(AV)

- (A) Maximum permissible case temperature - (˚C)

6/19