DYNEX DG626BH25 Datasheet

DG646BH25

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APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC)

■ Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters

FEATURES

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ High Surge Current Capability

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements

KEY PARAMETERS

I

TCM

2000A

V

DRM

2500V

I

T(AV)

867A
dVD/dt 1000V/µs
diT/dt 300A/µs

Outline type code: H.

See Package Details for further information.

VOLTAGE RATINGS

2500DG646BH25

ConditionsType Number

Tvj = 125oC, IDM = 50mA,

I

RRM

= 50mA

Repetitive Peak Off-state Voltage

V

DRM

V

Repetitive Peak Reverse Voltage

V

RRM

V

16

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

THS = 80oC. Double side cooled. Half sine 50Hz.

V

D

= V

DRM

, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF

RMS on-state current A

A

A2000

867

1360

Units

Repetitive peak controllable on-state current

THS = 80oC. Double side cooled. Half sine 50Hz.

I

T(RMS)

I

T(AV)

Mean on-state current

DG646BH25

Gate Turn-off Thyristor

Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000

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SURGE RATINGS

Conditions

18.0

1.62 x 10

6

kA

A

2

s

Surge (non-repetitive) on-state current

I

2

t for fusing

10ms half sine. Tj = 125oC

10ms half sine. T

j

=125oC

di

T

/dt Critical rate of rise of on-state current 300

135 V/µs

Max. Units

Rate of rise of off-state voltagedVD/dt

1000 V/µs

To 66% V

DRM

; VRG = -2V, Tj = 125oC

I

TSM

Symbol Parameter

I2t

VD = 1500V, IT = 2000A, Tj = 125oC, IFG > 30A,
Rise time > 1.0µs

A/µs

To 66% V

DRM

; RGK ≤ 1.5Ω, Tj = 125oC

GATE RATINGS

Symbol Parameter Conditions

V

UnitsMax.

16

15

Min.

-

20

-Peak reverse gate voltage

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time
Minimum permissable off time

19

60

-50

30

-

- µs100

100

V

RGM

This value maybe exceeded during turn-off

I

FGM

P

FG(AV)

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

µs

A/µs

kW

W

A

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Max.Min.

R

th(c-hs)

Contact thermal resistance

R

th(j-hs)

-

- 0.045

- 0.006

o

C/W

per contact

Cathode side cooled

Double side cooled

Units

- 0.018

o

C/W

Anode side cooled

o

C/W0.03

Virtual junction temperature

T

OP/Tstg

Operating junction/storage temperature range

-

Clamping force

-

125

22.0

18.0

-40

kN

o

C/W

Clamping force 20.0kN
With mounting compound

DC thermal resistance - junction to heatsink
surface

T

vj

125

o

C

o

C

-

-

L

S

Peak stray inductance in snubber circuit nH200

I

T

= 2000A, VDM = 2500V, Tj = 125˚C,

diGQ/dt = 40A/µs, Cs = 2.0µF

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CHARACTERISTICS

Conditions

Peak reverse current

On-state voltageV

TM

Peak off-state current

Reverse gate cathode current

50-

Turn-on energy

Gate trigger current

Delay time

Rise time

Fall time

Gate controlled turn-off time

Turn-off energy

Storage time

Turn-off gate charge
Total turn-off gate charge

Peak reverse gate current

- 6600

V

RGM

= 16V, No gate/cathode resistor

µC

I

T

= 2000A, VDM = 2500V
Snubber Cap Cs = 2.0µF,
diGQ/dt = 40A/µs

T

j

= 125oC unless stated otherwise

Symbol Parameter

I

DM

I

RRM

V

GT

Gate trigger voltage

I

GT

I

RGM

E

ON

t

d

t

r

E

OFF

t

gs

t

gf

t

gq

Q

GQ

Q

GQT

I

GQM

Min. Max. Units

- 2.6 V

V

DRM

= 2500V, VRG = 0V - 100 mA

At V

RRM

-50mA

V

D

= 24V, IT = 100A, Tj = 25oC - 1.0 V

V

D

= 24V, IT = 100A, Tj = 25oC - 3.0 A

mA

mJ1188-VD = 15000V
IT = 2000A, dIT/dt = 300A/µs
IFG = 30A, rise time < 1.0µs

µs1.2-

- 3.0 µs

- 4000 mJ

- 17.0 µs

µs2.0-

µs19.0-

- 13200 µC

- 650 A

At 2000A peak, I

G(ON)

= 7A d.c.

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CURVES

-50 -25 0 25 50 75 100 125 150
Junction temperature T

j

- (˚C)

0

2.0

4.0

6.0

8.0

Gate trigger current I

GT

- (A)

0

0.5

1.0

1.5

2.0

Gate trigger voltage V

GT

- (V)

I

GT

V

GT

0 1.0 2.0 3.0 4.0 5.0

Instantaneous on-state voltage V

TM

- (V)

0

1000

2000

3000

4000

Instantaneous on-state current I

TM

- (A)

Measured under pulse conditions.
I

G(ON)

= 7A

Half sine wave 10ms

Tj = 125˚C

Tj = 25˚C

Fig.1 Maximum gate trigger voltage/current vs junction temperature

Fig.2 On-state characteristics

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0

10

20

30

40

0.0001 0.001 0.01

0.1

1.0

Pulse duration - (s)

Peak half sine wave on-state current - (kA)

0

0.005

0.010

0.015

0.020

0.001 0.01 0.1

1.0

10

Time - (s)

Thermal impedance - ˚C/W

dc

0 1.0 2.0 3.0 4.0

Snubber capacitance C

S

- (µF)

0

1000

2000

3000

Maximum permissible turn-off

current I

TCM

- (A)

Conditions:
Tj = 125˚C, VDM = V

DRM

,

dI

GQ

/dt = 40A/µs

Fig.3 Maximum dependence of I

TCM

on C

S

Fig.4 Maximum (limit) transient thermal impedance - double side cooled

Fig.5 Surge (non-repetitive) on-state current vs time

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0 500 1000 1500 70 80 90 100 120 130

Mean on-state current I

T(AV)

- (A) Maximum permissible case
temperature - (˚C)

4000

3000

2000

1000

0

Mean on-state power dissipation - (W)

Conditions:
I

G(ON)

= 7A

180˚

120˚

60˚

30˚

dc

0 400 800 1200 80 90 100 120 130

Mean on-state current I

T(AV)

- (A) Maximum permissible case

temperature - (˚C)

3000

2000

1000

0

Mean on-state power dissipation - (W)

Conditions:
I

G(ON)

= 7A

120˚

90˚

60˚

30˚

180˚

200 600 1000 70

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled