DYNEX DG408BP45 Datasheet

DG408BP45

Gate Turn-off Thyristor

Replaces March 1998 version, DS4091-2.3 DS4091-3.0 January 2000

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC)

■ Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters.

FEATURES

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ High Surge Current Capability

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

1000A

4500V

320A dVD/dt 1000V/µs diT/dt 300A/µs

Outline type code: P.

See Package Details for further information.

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

4500DG408BP45

Repetitive Peak Reverse Voltage

V

RRM

V

16

ConditionsType Number

Tvj = 125oC, IDM = 50mA,

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

= V

V

D

THS = 80oC. Double side cooled. Half sine 50Hz.

, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF

DRM

= 50mA

320

500

Units

A1000

A

1/19

DG408BP45

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

di

T

Surge (non-repetitive) on-state current

2

t for fusing

I

/dt Critical rate of rise of on-state current 300

10ms half sine. Tj = 125oC

10ms half sine. T VD = 3000V, IT = 1000A, Tj = 125oC, IFG > 30A,

Rise time > 1.5µs To 66% V

DRM

Conditions

=125oC

j

; RGK ≤ 1.5Ω, Tj = 125oC

Rate of rise of off-state voltagedVD/dt

To 66% V

L

Peak stray inductance in snubber circuit 200 nH

S

; VRG = -2V, Tj = 125oC

DRM

-

GATE RATINGS

Symbol Parameter Conditions

V

P

RGM

I

FGM

FG(AV)

Peak forward gate current

Average forward gate power

This value maybe exceeded during turn-off

0.245 x 10

Min.

-Peak reverse gate voltage

20

-

Max. Units

7.0

kA

6

2

s

A

A/µs

225 V/µs

1000 V/µs

UnitsMax.

16

70

10

V

A

W

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time Minimum permissable off time

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Max.Min.

Double side cooled

R

th(c-hs)

T

OP/Tstg

th(j-hs)

vj

DC thermal resistance - junction to heatsink surface

Contact thermal resistance

Virtual junction temperature

Operating junction/storage temperature range

Anode side cooled

Cathode side cooled Clamping force 12.0kN

With mounting compound

per contact

-

15

- 0.041

-

- 0.1

- 0.009

-

-40

15

60

-20

- µs100

125

kW

A/µs

µs

Units

o

C/W

o

C/W0.07

o

C/W

o

C/W

o

C

o

C

2/19

-

Clamping force

11.0

15.0

kN

CHARACTERISTICS

= 125oC unless stated otherwise

T

j

DG408BP45

Symbol Parameter

On-state voltageV

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

I

V

I

E

I

DM

RRM

I

GT

RGM

t

OFF

t

gs

t

gf

TM

GT

ON

d

Conditions

At 1000A peak, I

= 4500V, VRG = 0V - 50 mA

V

DRM

At V

RRM

V

= 24V, IT = 100A, Tj = 25oC - 1.0 V

D

V

= 24V, IT = 100A, Tj = 25oC - 1.5 A

D

V

= 16V, No gate/cathode resistor

RGM

= 4A d.c.

G(ON)

Min. Max. Units

- 3.5 V

-50mA

50-

IT = 1000A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.5µs

- 5.0 µs

- 4120 mJ

- 14.0 µs

= 1000A, VDM = V

I

T

DRM

mA

mJ2300-VD = 3000V

µs1.5-

Q

I

t

gq

GQ

GQT

GQM

Gate controlled turn-off time

Turn-off gate charge Total turn-off gate charge

Peak reverse gate current

Snubber Cap Cs = 1.0µF, diGQ/dt = 30A/µs

µs15.5-

- 3000

µC

- 6000 µC

- 420 A

3/19

DG408BP45

CURVES

2.0

1.5

4.0

3.0

- (V)

GT

1.0

0.5

Gate trigger voltage V

0

2.0

GT

V

GT

1.0

I

GT

0

-50 -25 0 25 50 75 100 125 150 Junction temperature T

Fig.1 Maximum gate trigger voltage/current vs junction temperature

- (˚C)

j

Gate trigger current I

- (A)

2.0 Measured under pulse conditions.

I

= 4.0A

G(ON)

Half sine wave 10ms

- (kA)

1.5

TM

1.0

Tj = 25˚C

Tj = 125˚C

0.5

Instantaneous on-state current I

0

1.0 2.0 3.0 4.0 5.0 Instantaneous on-state voltage V

Fig.2 On-state characteristics Fig.3 Maximum dependence of I

TM

- (V)

1.5

- (kA)

TCM

1.0

0.5 Conditions:

= 125˚C, VDM = V

T

j

/dt = 30A/µs

dI

0

0.25 0.50 1.00 1.5 2.0

Maximum permissible turn-off current I

0.75 1.25 1.75

Snubber capacitance CS - (µF)

GQ

TCM

on C

S

DRM

,

4/19

0.05

DG408BP45

0.04

0.03

0.02

Thermal impedance - ˚C/W

0.01

0

0.001 0.01 0.1

Fig.4 Maximum (limit) transient thermal impedance - double side cooled

20

Time - (s)

1.0

10

dc

100

15

10

5

0

Peak half sine wave on-state current - (kA)

0.0001 0.001 0.01 Pulse duration - (s)

Fig.5 Surge (non-repetitive) on-state current vs time

0.1

1.0

5/19

DG408BP45

1500

Conditions: I

1000

G(ON)

= 4.0A

180˚

120˚

dc

60˚

30˚

500

Mean on-state power dissipation - (W)

0

0 200 400 600 70 80 90 100 120 130

Mean on-state current I

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

T(AV)

1500

Conditions: I

= 4.0A

G(ON)

- (A) Maximum permissible case temperature - (˚C)

1000

120˚

90˚

60˚

30˚

500

Mean on-state power dissipation - (W)

0

50 150 250

0 100 200 300 80 90 100 120 130

Mean on-state current I

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

T(AV)

180˚

350

- (A) Maximum permissible case

temperature - (˚C)

6/19