DYNEX DG406BP25 Datasheet

DG406BP25

Gate Turn-off Thyristor

Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC).

■ Uninterruptable Power Supplies

■ High Voltage Converters.

■ Choppers.

■ Welding.

■ Induction Heating.

■ DC/DC Converters.

FEATURES

■ Double Side Cooling.

■ High Reliability In Service.

■ High Voltage Capability.

■ Fault Protection Without Fuses.

■ High Surge Current Capability.

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements.

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

1000A

2500V

400A dVD/dt 1000V/µs diT/dt 300A/µs

Outline type code: P.

See Package Details for further information.

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

2500DG406BP25

Repetitive Peak Reverse Voltage

V

RRM

V

16

ConditionsType Number

T

= 125oC, IDM = 50mA,

vj

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

= V

V

D

THS = 80oC. Double side cooled. Half sine 50Hz.

, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF

DRM

= 50mA

400

630

Units

A1000

A

1/19

DG406BP25

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

di

T

dVD/dt

L

Surge (non-repetitive) on-state current

2

t for fusing

I

/dt Critical rate of rise of on-state current 300

Rate of rise of off-state voltage

Peak stray inductance in snubber circuit

S

10ms half sine. Tj = 125oC

10ms half sine. T VD = 2000V, IT = 1000A, Tj = 125oC, IFG ≥ 30A,

Rise time > 1.0µs To 66% V To 66% V

= 1000A, VD = V

I

T

diGQ/dt = 30A/µs, Cs = 1.0µF

DRM

Conditions

=125oC

j

; RGK ≤ 1.5Ω, Tj = 125oC ; VRG = -2V, Tj = 125oC

, Tj = 125oC,

DRM

-

GATE RATINGS

Symbol Parameter Conditions

V

P

RGM

I

FGM

FG(AV)

Peak forward gate current

Average forward gate power

This value maybe exceeded during turn-off

0.32 x 10

Min.

-Peak reverse gate voltage

20

-

Max. Units

8.0

kA

6

2

s

A

A/µs

500 V/µs

1000 V/µs

200 nH

UnitsMax.

16

70

10

V

A

W

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time Minimum permissable off time

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Max.Min.

Double side cooled

R

th(c-hs)

T

OP/Tstg

th(j-hs)

vj

DC thermal resistance - junction to heatsink surface

Contact thermal resistance

Virtual junction temperature

Operating junction/storage temperature range

Anode side cooled

Cathode side cooled Clamping force 12.0kN

With mounting compound

per contact

-

15

- 0.041

-

- 0.1

- 0.009

-

-40

15

60

-20

- µs100

125

kW

A/µs

µs

Units

o

C/W

o

C/W0.07

o

C/W

o

C/W

o

C

o

C

2/19

-

Clamping force

11.0

15.0

kN

CHARACTERISTICS

= 125oC unless stated otherwise

T

j

DG406BP25

Symbol Parameter

On-state voltageV

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

I

V

I

E

I

DM

RRM

I

GT

RGM

t

OFF

t

gs

t

gf

TM

GT

ON

d

Conditions

At 1000A peak, I

= 2500V, VRG = 0V - 50 mA

V

DRM

At V

RRM

V

= 24V, IT = 100A, Tj = 25oC - 1.0 V

D

V

= 24V, IT = 100A, Tj = 25oC - 1.5 A

D

V

= 16V, No gate/cathode resistor

RGM

= 4A d.c.

G(ON)

Min. Max. Units

- 2.5 V

-50mA

50-

IT = 1000A, dIT/dt = 300A/µs IFG = 30A, rise time ≤ 1.0µs

- 3.0 µs

- 2300 mJ

- 14.0 µs

= 1000A, VDM = 2500V

I

T

mA

mJ1040-VD = 2000V

µs1.5-

Q

I

t

gq

GQ

GQT

GQM

Gate controlled turn-off time

Turn-off gate charge Total turn-off gate charge

Peak reverse gate current

Snubber Cap Cs = 1.0µF, diGQ/dt = 30A/µs

µs15.5-

- 3000

µC

- 6000 µC

- 420 A

3/19

DG406BP25

CURVES

2.0

1.5

4.0

3.0

- (V)

GT

1.0

0.5

Gate trigger voltage V

0

2.0

GT

V

GT

1.0

I

GT

0

-50 -25 0 25 50 75 100 125 150 Junction temperature T

Fig.1 Maximum gate trigger voltage/current vs junction temperature

- (˚C)

j

Gate trigger current I

- (A)

4.0 Measured under pulse conditions.

I

= 4.0A

G(ON)

Half sine wave 10ms

- (kA)

3.0

TM

Tj = 25˚C

Tj = 125˚C

2.0

1.0

Instantaneous on-state current I

0

1.0 2.0 3.0 4.0 5.0 Instantaneous on-state voltage V

Fig.2 On-state characteristics Fig.3 Maximum dependence of I

TM

- (V)

1.5

- (kA)

TCM

1.0

0.5 Conditions:

Tj = 125˚C, VDM = V dIGQ/dt = 30A/µs

0

0.25 0.50 1.00 1.5 2.0

Maximum permissible turn-off current I

0.75 1.25 1.75

Snubber capacitance CS - (µF)

on C

TCM

S

DRM

,

4/19

0.05

DG406BP25

0.04

0.03

0.02

Thermal impedance - ˚C/W

0.01

0

0.001 0.01 0.1

Fig.4 Maximum (limit) transient thermal impedance - double side cooled

20

Time - (s)

1.0

10

dc

100

15

10

5

0

Peak half sine wave on-state current - (kA)

0.0001 0.001 0.01 Pulse duration - (s)

Fig.5 Surge (non-repetitive) on-state current vs time

0.1

1.0

5/19

DG406BP25

1500

Conditions:

dc

1000

I

G(ON)

= 4.0A

180˚

120˚

60˚

30˚

500

Mean on-state power dissipation - (W)

0

0 200 400 600 70 80 90 100 120 130

Mean on-state current I

- (A) Maximum permissible case

T(AV)

temperature - (˚C)

Fig.6 Steady state rectangluar wave conduction loss - double side cooled

1500

Conditions: I

= 4.0A

G(ON)

1000

180˚

120˚

90˚

60˚

30˚

500

Mean on-state power dissipation - (W)

0

100 300 500 70

0 200 400 600 80 90 100 120 130

Mean on-state current I

- (A) Maximum permissible case

T(AV)

temperature - (˚C)

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

6/19