DFM600LXS12-A000
DFM600LXS12-A000
Fast Recovery Diode Module
Preliminary Information
DS5477-1.2 July 2001
FEATURES
■ Low Reverse Recovery Charge
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base
APPLICATIONS
■ Chopper Diodes
■ Boost and Buck Converters
■ Free-wheel Circuits
■ Snubber Circuits
■ Resonant Converters
■ Induction Heating
■ Multi-level Switch Inverters
The DFM600LXS12-A000 is a single 1200 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
KEY PARAMETERS
V
RRM
V
F
I
F
I
FM
(typ) 1.9V
(max) 600A
(max) 1200A
2
Fig. 1 Circuit diagram
1200V
1
12
ORDERING INFORMATION
Order As:
DFM600LXS12-A000
Note: When ordering, please use the complete part number.
www.dynexsemi.com
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DFM600LXS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
RRM
I
F
I
FM
I2t
Pmax
V
isol
Q
pd
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
2
t value fuse current rating
I
Maximum power dissipation
Isolation voltage
Partial discharge
Parameter
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O
Baseplate material: Cu
Creepage distance: 22mm
Clearance: 12mm
CTI (Critical Tracking Index): 175
3
Test Conditions
= 125˚C
T
vj
DC, T
T
V
T
= 65˚C
case
= 110˚C, tp = 1ms
case
= 0, tp = 10ms, Tvj = 125˚C
R
= 25˚C, Tvj = 125˚C
case
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 1200V, V2 = 900V, 50Hz RMS
1
Max.
1200
600
1200
100
2080
4
10
Units
V
A
A
2
kA
W
kV
pC
s
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
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Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M5
Electrical connections - M5
Min.
–40
Typ.
-
-
-
-
-
Max.
-
-
-
-
-
-
48
15
125
125
5
5
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Units
˚C/kW
˚C/kW
˚C
˚C
Nm
Nm
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
DFM600LXS12-A000
Symbol
I
RM
V
F
L
Peak reverse current
Forward voltage
Inductance
Parameter
DYNAMIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Symbol
I
rr
Q
rr
E
rec
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Parameter
Test Conditions
= 1200V, Tvj = 125˚C
V
R
= 600A
I
F
= 600A, Tvj = 125˚C
I
F
Test Conditions
= 600A,
I
F
/dt = 4500A/µs,
dI
F
= 600V
V
R
Min.
-
Min.
Typ.
-
-
-
-
1.9
2.1
15
Typ.
400
-
100
-
-
40
Max.
-
Max.
10
2.2
2.4
Units
mA
V
V
nH
-
Units
-
-
-
A
µC
mJ
Tvj = 125˚C unless stated otherwise.
Symbol
I
rr
Q
rr
E
rec
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Parameter
Test Conditions
I
= 600A,
F
/dt = 4200A/µs,
dI
F
= 600V
V
R
Min.
-
-
-
Typ.
475
150
70
Max.
-
-
-
Units
A
µC
mJ
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