DYNEX DFM200PXM33-A000 Datasheet

DFM200PXM33-A000

Fast Recovery Diode Module

Preliminary Information

DS5496-1.3 September 2001

FEATURES

■ Low Reverse Recovery Charge

■ High Switching Speed

■ Low Forward Voltage Drop

■ Isolated Base

■ MMC Baseplate With AlN Substrates

APPLICATIONS

■ Chopper Diodes

■ Boost and Buck Converters

■ Free-wheel Circuits

■ Snubber Circuits

■ Resonant Converters

■ Induction Heating

■ Multi-level Switch Inverters

The DFM200PXM33-A000 module houses a series connected pair of 3300 volt, fast recovery diodes (FRDs). Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.

Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.

These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

KEY PARAMETERS V

RRM

V

F

I

F

I

FM

(typ) 2.5V (max) 200A (max) 400A

2(K2)

Fig. 1 Circuit diagram

3300V

1(A2/K1)

3(A1)

ORDERING INFORMATION

Order As:

DFM200PXM33-A000

Note: When ordering, please use the complete part number.

www.dynexsemi.com

Outline type code: P

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

1/7

DFM200PXM33-A000

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

RRM

I

F

I

FM

I2t

Pmax

V

isol

Q

pd

Repetitive peak reverse voltage

Forward current (per arm)

Max. forward current

2

t value fuse current rating

I

Maximum power dissipation

Isolation voltage

Partial discharge

Parameter

THERMAL AND MECHANICAL RATINGS

Internal insulation: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Critical Tracking Index): 175

Test Conditions

= 125˚C

T

vj

DC, T

T

V

T

= 70˚C

case

= 115˚C, tp = 1ms

case

= 0, tp = 10ms, Tvj = 125˚C

R

= 25˚C, Tvj = 125˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

IEC1287. V

= 2450V, V2 = 1800V, 50Hz RMS

1

Max.

3300

200

400

20

925

6.0

10

Units

V

A

2

kA

W

kV

pC

s

Symbol

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

2/7

Parameter

Thermal resistance - diode (per arm)

Thermal resistance - case to heatsink

(per module)

Junction temperature

Storage temperature range

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

-

Mounting - M6

Electrical connections - M5

Min.

–40

Typ.

-

Max.

-

108

-

16

125

5

4

www.dynexsemi.com

Units

˚C/kW

˚C

Nm

STATIC ELECTRICAL CHARACTERISTICS

Tvj = 25˚C unless stated otherwise.

DFM200PXM33-A000

Symbol

I

RM

V

F

L

Peak reverse current

Forward voltage

Inductance

Parameter

DYNAMIC ELECTRICAL CHARACTERISTICS

Tvj = 25˚C unless stated otherwise.

Symbol

I

rr

Q

rr

E

rec

Reverse recovery current

Reverse recovery charge

Reverse recovery energy

Parameter

Test Conditions

= 3300V, Tvj = 125˚C

V

R

= 200A

I

F

= 200A, Tvj = 125˚C

I

F

Test Conditions

= 200A,

I

F

/dt = 1100A/µs,

dI

F

= 1800V

V

R

Min.

-

Min.

Typ.

-

2.5

30

Typ.

165

-

115

-

130

-

Max.

-

Max.

15

Units

mA

-

V

nH

Units

-

A

µC

mJ

Tvj = 125˚C unless stated otherwise.

Symbol

I

rr

Q

rr

E

rec

Reverse recovery current

Reverse recovery charge

Reverse recovery energy

Parameter

Test Conditions

I

= 200A,

F

/dt = 1000A/µs,

dI

F

= 1800V

V

R

Min.

-

Typ.

185

190

220

Max.

-

Units

A

µC

mJ

www.dynexsemi.com

3/7