DFM1200NXM33-A000
DFM1200NXM33-A000
Fast Recovery Diode Module
Preliminary Information
DS5472-1.3 October 2001
FEATURES
■ Low Reverse Recovery Charge
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base
■ Dual Diodes Can Be Paralleled for 2400A Rating
■ MMC Baseplate With AlN Substrates
APPLICATIONS
■ Brake Chopper Diode
■ Boost and Buck Converters
■ Free-wheel Circuits
■ Motor Drives
■ Resonant Converters
■ Induction Heating
■ Multi-level Switch Inverters
The DFM1200NXM33-A000 is a dual 3300 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
KEY PARAMETERS
V
RRM
V
F
I
F
I
FM
External connection for single 2400A diode application
(typ) 2.5V
(max) 1200A
(max) 2400A
Fig. 1 Circuit diagram
3300V
External connection
C2(K2)C1(K1)
E1(A1) E2(A2)
External connection
E1
E2
C1
C2
ORDERING INFORMATION
Order As:
DFM1200NXM33-A000
Note: When ordering, please use the complete part number.
www.dynexsemi.com
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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DFM1200NXM33-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
RRM
I
F
I
FM
I2t
Pmax
V
isol
Q
pd
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
2
t value fuse current rating
I
Maximum power dissipation
Isolation voltage
Partial discharge
Parameter
THERMAL AND MECHANICAL RATINGS
Internal insulation: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175
Test Conditions
= 125˚C
T
vj
DC, T
T
V
T
= 70˚C
case
= 115˚C, tp = 1ms
case
= 0, tp = 10ms, Tvj = 125˚C
R
= 25˚C, Tvj = 125˚C
case
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 2450V, V2 = 1800V, 50Hz RMS
1
Max.
3300
1200
2400
720
5880
6
10
Units
V
A
A
2
s
A
W
kV
pC
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
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Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Min.
–40
Typ.
-
-
-
-
-
Max.
-
-
-
-
-
-
17
6
125
125
5
10
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Units
˚C/kW
˚C/kW
˚C
˚C
Nm
Nm
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
DFM1200NXM33-A000
Symbol
I
RM
V
F
L
Parameter
Peak reverse current
Forward voltage
Inductance
= 3300V, Tvj = 125˚C
V
R
= 1200A
I
F
= 1200A, Tvj = 125˚C
I
F
Test Conditions
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Symbol
I
rr
Q
rr
E
rec
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Test Conditions
I
/dt = 5600A/µs,
dI
F
-
= 1200A,
F
= 1800V
V
R
Min.
-
-
-
-
Min.
-
-
-
Typ.
-
2.5
2.5
25
Typ.
1000
650
750
Max.
90
-
-
-
Max.
-
-
-
Units
mA
V
V
nH
Units
A
µC
mJ
Tvj = 125˚C unless stated otherwise.
Symbol
I
rr
Q
rr
E
rec
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Parameter
Test Conditions
I
= 1200A,
F
/dt = 4500A/µs,
dI
F
= 1800V
V
R
Min.
-
-
-
Typ.
1050
1000
1250
Max.
-
-
-
Units
A
µC
mJ
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