DYNEX DF75435, DF75434, DF75432, DF75430 Datasheet

DF754

DF754

Fast Recovery Diode

Replaces March 1998 version, DS4216-3.3 DS4216-4.0 January 2000

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Inverters And Choppers

■ Welding

■ High Frequency Rectification

■ UPS

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DF754 35
DF754 34
DF754 32
DF754 30

3500
3400
3200
3000

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V
I

F(AV)

I

FSM

Q
t

rr

RRM

r

3500V

865A

8000A

1000µC

6.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 1360 A

T

case

T

= 65oC 1200 A

case

Half wave resistive load, T

T

= 65oC 800 A

case

T

= 65oC 670 A

case

Outline type code: M779b.

= 65oC 865 A

case

= 65oC 515 A

case

UnitsMax.

1/9

DF754

SURGE RATINGS

ParameterSymbol

FSM

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

2

t for fusingI2t

Surge (non-repetitive) forward currentI

2

t for fusingI2t

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

Max. Units

8.0 kA

10ms half sine; with 0% V

RRM, Tj

= 150oC

320 x 10

-kA

10ms half sine; with 50% V

RRM, Tj

= 150oC

-A

-kA

10ms half sine; with 100% V

RRM, Tj

= 150oC

-A

Conditions Max. Units

Double side cooled - 0.036

dc

Min.

Single side cooled

- 0.076

0.01

-

- 0.02

Clamping force 15kN
with mounting compound

Cathode dc
Double side

Single side

3

A2sI2t for fusingI2t

2

sI

2

sI

o

C/W

o

C/W- 0.069Anode dc

o

C/W

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

On-state (conducting) - 150

-55 175

16.513.5Clamping force-

o

o

kN

C
C

2/9

CHARACTERISTICS

DF754

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

V

FRM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC--V

DEFINITION OF K FACTOR AND Q

Parameter

Q

= 0.5x IRR(t1 + t2)

RA1

RA1

Conditions Max.

At 1500A peak, T
At V

, T

RRM

case

= 25oC - 2.5 V

case

= 150oC-mA

80

6.0 -

IF = 1000A, diRR/dt = 100A/µs
T

= 150oC, VR = 100V

case

- 1000 µC

- 300 A

---

At Tvj = 150oC - 1.25 V

At Tvj = 150oC - 0.6 mΩ

µs

dIR/dt

0.5x I

k = t

t

t

1

2

RR

I

RR

1/t2

τ

3/9