DYNEX DF68545, DF68544, DF68543, DF68542, DF68541 Datasheet

DF685

DF685

Fast Recovery Diode

Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000

APPLICATIONS

■ Snubber Diode For GTO Applications

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DF685 45
DF685 44
DF685 43
DF685 42
DF685 41
DF685 40

4500
4400
4300
4200
4100
4000

V

Lower voltage grades available.

CURRENT RATINGS

Conditions

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: M779b.

See Package Details for further information.

4500V

445A

4500A
650µC

5µs

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 700 A

T

case

T

= 65oC 610 A

case

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

T

= 65oC 440 A

case

T

= 65oC 365 A

case

= 65oC 445 A

case

= 65oC 280 A

case

UnitsMax.

1/8

DF685

SURGE RATINGS

ParameterSymbol

FSM

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

2

t for fusingI2t

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

Max. Units

4.5 kA

10ms half sine; with 0% V

RRM, Tj

= 150oC

101.25x10

3.6 kA

10ms half sine; with 50% V

RRM, Tj

= 150oC

64.8x10

-kA

10ms half sine; with 100% V

RRM, Tj

= 150oC

-A

Conditions Max. Units

Double side cooled - 0.045

dc

Min.

Single side cooled

- 0.095

0.01

-

- 0.02

Clamping force 10kN
with mounting compound

Cathode dc
Double side

Single side

3

A2sI2t for fusingI2t

3

A2sI2t for fusingI2t

2

sI

o

C/W

o

C/W- 0.086Anode dc

o

C/W

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

On-state (conducting) - 150

-55 150

11.09.0Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Parameter

Conditions Max.

At 1500A peak, T
At V

, T

RRM

= 150oC-mA

case

= 25oC - 4.8 V

case

80

5-

IF = 1000A, diRR/dt = 100A/µs
T

= 150oC, VR = 100V

case

- 650 µC

270 - A

1.8 - -

At Tvj = 150oC - 2.0 V

At Tvj = 150oC - 1.76 mΩ

o

C

o

C

kN

µs

2/8

V

FRM

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 220 V

DF685

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

3000

2500

- (A)

F

Measured under pulse conditions

RA1

τ

Tj = 150˚C

Tj = 25˚C

2000

1500

Instantaneous forward current I

1000

500

0 2.0 4.0 6.0 8.0

Instantaneous forward voltage V

- (V)

F

Fig. 1 Maximum (limit) forward characteristics

3/8