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DF451
DF451
Fast Recovery Diode
Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Inverters And Choppers
■ Welding
■ High Frequency Rectification
■ UPS
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DF451 16
DF451 14
DF451 12
DF451 10
DF451 08
DF451 06
1600
1400
1200
1000
800
600
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
Q
r
t
rr
Outline type code: M771.
See Package Details for further information.
Fig. 1 Package outline
1600V
295A
3500A
25µC
1.22µs
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DF451 12
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DF451
CURRENT RATINGS
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
Mean forward current
RMS value
I
F
Continuous (direct) forward current
Half wave resistive load, T
T
= 65oC 543 A
case
T
= 65oC 391 A
case
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
= 65oC 348 A
T
case
T
= 65oC 285 A
case
SURGE RATINGS
Conditions
FSM
ParameterSymbol
Surge (non-repetitive) forward currentI
10ms half sine; with 0% V
= 65oC 295 A
case
= 65oC 220 A
case
Max. Units
3.5 kA
= 150oC
RRM, Tj
61.25 x 103A2sI2t for fusingI2t
UnitsMax.
FSM
Surge (non-repetitive) forward currentI
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Parameter
2.8 kA
10ms half sine; with 50% V
RRM, Tj
= 150oC
39.2 x 10
Conditions Max. Units
Double side cooled
dc
-
-0.07
Anode dc
Single side cooled
Cathode dc
Clamping force 5.0kN
with mounting compound
Forward (conducting) - 150
Double side
Single side
- 0.147oC/W
0.02
-
-0.02
–55 150
5.54.5Clamping force-
3
A2sI2t for fusingI2t
o
C/W
o
C/W- 0.133
o
C/W
o
C/W
o
C
o
C
kN
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CHARACTERISTICS
DF451
Symbol Typ. Units
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage di/dt = 1000A/µs, T
DEFINITION OF K FACTOR AND Q
Parameter
RA1
Conditions Max.
At 600A peak, T
At V
, T
RRM
case
I
= 500A, di
F
T
= 125oC, VR = 100V
case
= 25oC - 2.65 V
case
= 125oC-mA
1.22
/dt = -80A/µs
RR
100
-
-25µC
-40A
1.7 - -
At Tvj = 125oC-1.6V
o
= 125
At T
vj
C-1.5mΩ
= 125oC-40V
j
Q
= 0.5x IRR(t1 + t2)
RA1
µs
dIR/dt
0.5x I
k = t
t
t
1
2
RR
I
RR
1/t2
τ
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DF451
CURVES
2500
Measured under pulse conditions
2000
- (A)
F
Tj = 150˚C
1500
Tj = 25˚C
1000
Instantaneous forward current, I
500
2.0 3.0 4.0 5.0 6.0
Instantaneous forward voltage, V
- (V)
F
Fig.2 Maximum (limit) forward characteristics
500
Measured under pulse conditions
400
- (A)
F
300
Tj = 150˚C
200
Tj = 25˚C
Instantaneous forward current, I
100
0
1.25 1.5 1.75 2.0 2.25
Instantaneous forward voltage, V
- (V)
F
Fig.3 Maximum (limit) forward characteristics
1000
Conditions:
T
= 125˚C,
j
V
= 100V
R
- (µC)
rr
100
IF = 2000A
I
F
I
F
IF = 200A
IF = 100A
10
Reverse recovered charge Q
1
1 10 100 1000
Rate of rise of reverse current, dI
/dt - (A/µs)
R
Fig.4 Recovered charge Fig.5 Typical reverse recovery current vs rate of rise of
= 1000A
= 500A
1000
Conditions:
= 125˚C,
T
j
= 100V
V
R
IF = 2000A
I
- (A)
rr
100
I
IF = 100A
10
Reverse recovery current, I
1
1 10 100 1000
Rate of rise of reverse current, dI
/dt - (A/µs)
R
forward current
= 1000A
F
= 500A
F
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0.1
- (˚C/W)
th(j-c)
0.01
Thermal impedance - junction to case, Z
DF451
d.c. Double side cooled
0.001
Time - (s)
Fig.6 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
1001010.10.01
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DF451
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep
(One in each electrode)
Cathode
Ø42 max
Ø19 nom
15.0
14.0
Ø19 nom
Nominal weight: 50g
Clamping force: 5kN ±10%
Package outline type code: M771
Anode
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97.
France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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