DYNEX DF451 User Manual

DF451

DF451

Fast Recovery Diode

Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Inverters And Choppers

■ Welding

■ High Frequency Rectification

■ UPS

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DF451 16
DF451 14
DF451 12
DF451 10
DF451 08
DF451 06

1600
1400
1200
1000

800
600

Conditions

V

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: M771.

See Package Details for further information.

Fig. 1 Package outline

1600V

295A

3500A

25µC

1.22µs

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:

DF451 12

Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.

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DF451

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

Mean forward current

RMS value

I

F

Continuous (direct) forward current

Half wave resistive load, T

T

= 65oC 543 A

case

T

= 65oC 391 A

case

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 348 A

T

case

T

= 65oC 285 A

case

SURGE RATINGS

Conditions

FSM

ParameterSymbol

Surge (non-repetitive) forward currentI

10ms half sine; with 0% V

= 65oC 295 A

case

= 65oC 220 A

case

Max. Units

3.5 kA

= 150oC

RRM, Tj

61.25 x 103A2sI2t for fusingI2t

UnitsMax.

FSM

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

T

stg

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Storage temperature range

Parameter

2.8 kA

10ms half sine; with 50% V

RRM, Tj

= 150oC

39.2 x 10

Conditions Max. Units

Double side cooled

dc

-

-0.07

Anode dc

Single side cooled

Cathode dc

Clamping force 5.0kN
with mounting compound

Forward (conducting) - 150

Double side

Single side

- 0.147oC/W

0.02

-

-0.02

–55 150

5.54.5Clamping force-

3

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.133

o

C/W

o

C/W

o

C

o

C

kN

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CHARACTERISTICS

DF451

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

V

FRM

Forward voltage

Peak reverse current

Reverse recovery time

Recovered charge (50% chord)

Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, T

DEFINITION OF K FACTOR AND Q

Parameter

RA1

Conditions Max.

At 600A peak, T

At V

, T

RRM

case

I

= 500A, di

F

T

= 125oC, VR = 100V

case

= 25oC - 2.65 V

case

= 125oC-mA

1.22

/dt = -80A/µs

RR

100

-

-25µC

-40A

1.7 - -

At Tvj = 125oC-1.6V

o

= 125

At T

vj

C-1.5mΩ

= 125oC-40V

j

Q

= 0.5x IRR(t1 + t2)

RA1

µs

dIR/dt

0.5x I

k = t

t

t

1

2

RR

I

RR

1/t2

τ

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