DYNEX DCR840F48, DCR840F46, DCR840F44, DCR840F42 Datasheet

DCR840F
DCR840F
Phase Control Thyristor
Preliminary Information
DS5521-1.1 February 2002
FEATURES
Double Side Cooling
High Surge Capability
Low Turn-on Losses
APPLICATIONS
High Voltage Power Supplies
DC Motor Control
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages V
DRM VRRM
V
DCR840F48 DCR840F46 DCR840F44 DCR840F42
Lower voltage grades available.
4800 4600 4400 4200
Conditions
Tvj = 0˚ to 125˚C, I
= I
RRM
, V & V & V
RRM tp
= 100mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table.
For example:
DCR840F48
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
KEY PARAMETERS V
DRM
I
T(AV)
I
TSM
dVdt* 1000V/ dI/dt 300A/
*Higher dV/dt selections available
4800V 840A 10,000A
µs
µs
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DCR840F
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 840 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 610 A
CURRENT RATINGS
T
= 80˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
UnitsMax.
- 1320 A
- 1220 A
- 950 A
- 830 A
UnitsMax.
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 670 A
- 1050 A
- 940 A
Half wave resistive load 470 A
- 740 A
- 630 A
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SURGE RATINGS
DCR840F
Symbol
I
TSM
2
tI
I
I
TSM
I2t
Surge (non-repetitive) on-state current
2
t for fusing
Surge (non-repetitive) on-state current
2
I
t for fusing 0.78 x 106A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
RRM
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 19.5kN with mounting compound
= 125oC
case
- 1/4 sine
= 125oC
case
dc
Cathode dc Double side
Single side
Max. Units
10 kA
6
0.5 x 10
A2s
12.5 kA
- 0.022oC/W
o
C/W- 0.038Anode dc
o
- 0.052
0.004
-
C/W
o
C/W
- 0.008oC/W
On-state (conducting) - 135
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
Reverse (blocking)
-
125
–55 125
18.0 22.0 kN
o
C
o
C
o
C
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