DYNEX DCR5980Z18, DCR5980Z16, DCR5980Z14, DCR5980Z12 Datasheet

DCR5980Z

Phase Control Thyristor

Target Information

DS5482-1.1 February 2002

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Converters

■ DC Motor Control

■ High Voltage Power Supplies

VOLTAGE RATINGS

Part and Ordering

Number

DCR5980Z18 DCR5980Z16 DCR5980Z14 DCR5980Z12

Lower voltage grades available.

Repetitive Peak

Voltages

V

and V

DRM

V

1800 1600 1400 1200

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

RRM

, V & V & V

RRM tp

= 500mA,

RSM RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

= 10ms, = + 100V

KEY PARAMETERS V I

T(AV)

I

TSM

DRM

(max) 5985A (max) 98000A

1800V

dV/dt 1000V/ dI/dt 250A/

Outline type code: Z

(See Package Details for further information)

Fig. 1 Package outline

µs

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table.

For example:

DCR5980Z14

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

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DCR5980Z

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol

Double Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

I

T(AV)

I

T(RMS)

I

T

= 80˚C unless stated otherwise.

case

Mean on-state current

RMS value

Continuous (direct) on-state current

Symbol

Double Side Cooled

I

T(AV)

Mean on-state current

Parameter

Test Conditions

Half wave resistive load

Test Conditions

Half wave resistive load

Max.

5985

-

9400

8400

3820

-

6000

4920

Max.

4650

Units

A

Units

A

I

T(RMS)

I

T

RMS value

Continuous (direct) on-state current

Single Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load

-

7300

6360

2910

-

4570

3630

A

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SURGE RATINGS

DCR5980Z

Symbol

I

TSM

I2t

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

I

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter

DYNAMIC CHARACTERISTICS

Symbol

I

RRM/IRRM

dV/dt

dI/dt

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

Rate of rise of on-state current

Parameter

Test Conditions

10ms half sine, T

= 50% V

V

R

10ms half sine, T

V

Test Conditions

, T

At V

RRM/VDRM

To 67% V

DRM

From 67% V

= 125˚C

case

, Tj = 125˚C

to 1100A Repetitive 50Hz

DRM

Gate source 1A,

tr = 0.5µs, Tj = 125˚C

case

- 1/4 sine

RRM

case

= 0

R

Non-repetitive

= 125˚C

Min.

-

Max.

78.0

30.4 x 10

98.0

48 x 10

Max.

500

1000

250

500

Units

kA

2

6

s

A

kA

2

6

s

A

Units

mA

V/µs

A/µs

V

T(TO)

r

T

t

gd

I

L

I

H

Threshold voltage

On-state slope resistance

Delay time

Latching current

Holding current

= 125˚C

At T

vj

= 125˚C

At T

vj

= 67% V

V

D

= 0.5µs, Tj = 25˚C

t

r

= 25˚C, VD = 5V

T

j

T

= 25˚C, V

j

, gate source 20V, 10Ω

DRM

= ∞

G–K

1.0

150

40

0.77

-

0.05

-

1.5

750

200

V

mΩ

µs

mA

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