DCR504ST
DCR504ST
Phase Control Thyristor
Advance Information
Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Mean Current
■ Fatigue Free
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
DCR504ST14
DCR504ST13
DCR504ST12
DCR504ST11
DCR504ST10
Lower voltage grades available.
1400
1300
1200
1100
1000
Conditions
Tvj = 0˚ to 125˚C,
I
= I
RRM
, V
& V
& V
= 30mA,
RRM tp
=
RSM
+ 100V
RRM
= 10ms,
DRM
V
DRM
V
DSM
V
DRM
respectively
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt 1000V/
dI/dt 700A/
1400V
456A
6800A
µs
µs
Outline type code: T
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR504ST12
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR504ST
CURRENT RATINGS
T
= 60˚C unless stated otherwise
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 456 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 322 A
CURRENT RATINGS
T
= 80˚C unless stated otherwise
case
Symbol Parameter Conditions
Double Side Cooled
UnitsMax.
- 717 A
- 655 A
- 505 A
- 425 A
UnitsMax.
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 355 A
- 557 A
- 495 A
Half wave resistive load 248 A
- 390 A
- 310 A
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SURGE RATINGS
DCR504ST
Symbol
I
TSM
2
tI
I
I
TSM
I2t
Surge (non-repetitive) on-state current
2
t for fusing
Surge (non-repetitive) on-state current
2
I
t for fusing 231 x 10
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
RRM
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 4.5kN
with mounting compound
= 125oC
case
- 1/4 sine
= 125oC
case
dc
Cathode dc
Double side
Single side
Max. Units
5.5 kA
3
150x 10
A2s
6.8 kA
3
A2s
- 0.063oC/W
o
C/W- 0.11Anode dc
o
- 0.147
0.02
-
C/W
o
C/W
- 0.04oC/W
On-state (conducting) - 135
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
Reverse (blocking)
-
125
–55 125
4.0 5.0 kN
o
C
o
C
o
C
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