DYNEX DCR504ST14, DCR504ST13, DCR504ST12, DCR504ST11, DCR504ST10 Datasheet

DCR504ST
DCR504ST
Phase Control Thyristor
Advance Information
Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001
FEATURES
Double Side Cooling
High Surge Capability
High Mean Current
Fatigue Free
High Power Drives
High Voltage Power Supplies
DC Motor Control
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages V
DRM VRRM
V
DCR504ST14 DCR504ST13 DCR504ST12 DCR504ST11 DCR504ST10
Lower voltage grades available.
1400 1300 1200 1100 1000
Conditions
Tvj = 0˚ to 125˚C, I
= I
RRM
, V & V & V
= 30mA,
RRM tp
=
RSM
+ 100V
RRM
= 10ms,
DRM
V
DRM
V
DSM
V
DRM
respectively
KEY PARAMETERS V
DRM
I
T(AV)
I
TSM
dVdt 1000V/ dI/dt 700A/
1400V 456A 6800A
µs
µs
Outline type code: T
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table.
For example:
DCR504ST12
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR504ST
CURRENT RATINGS
T
= 60˚C unless stated otherwise
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 456 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 322 A
CURRENT RATINGS
T
= 80˚C unless stated otherwise
case
Symbol Parameter Conditions
Double Side Cooled
UnitsMax.
- 717 A
- 655 A
- 505 A
- 425 A
UnitsMax.
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 355 A
- 557 A
- 495 A
Half wave resistive load 248 A
- 390 A
- 310 A
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SURGE RATINGS
DCR504ST
Symbol
I
TSM
2
tI
I
I
TSM
I2t
Surge (non-repetitive) on-state current
2
t for fusing
Surge (non-repetitive) on-state current
2
I
t for fusing 231 x 10
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
RRM
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 4.5kN with mounting compound
= 125oC
case
- 1/4 sine
= 125oC
case
dc
Cathode dc Double side
Single side
Max. Units
5.5 kA
3
150x 10
A2s
6.8 kA
3
A2s
- 0.063oC/W
o
C/W- 0.11Anode dc
o
- 0.147
0.02
-
C/W
o
C/W
- 0.04oC/W
On-state (conducting) - 135
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
Reverse (blocking)
-
125
–55 125
4.0 5.0 kN
o
C
o
C
o
C
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