DYNEX DCR3480B52 User Manual

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FEATURES

•

Double Side Cooling

•

High Surge Capability

APPLICATIONS

•

High Power Drives

•

High Voltage Power Supplies

•

Static Switches

VOLTAGE RATINGS

Part and

Ordering

Number

Repetitive Peak

Voltages

V

DRM

and V

RRM

V

Conditions

DCR3480B52
DCR3480B50
DCR3480B48
DCR3480B46

5200
5000
4800
4600

T

vj

= -40°C to 125° C,

I

DRM

= I

RRM

= 300mA,

V

DRM

, V

RRM tp

= 10ms,

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available.

ORDERING INFORMATION

When ordering, select the required part number
shown in the Voltage Ratings selection table.

For example:

DCR3480B52

Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.

KEY PARAMETERS
V

DRM

5200V

I

T(AV)

3430A

I

TSM

49000A
dV/dt* 1500V/µs
dI/dt 400A/µs

*

Higher dV/dt selections available

Outline type code: B

(See Package Details for further information)

Fig. 1 Package outline

DCR3480B52

Phase Control Thyristor

Preliminary Informat ion

查询DCR3480B46供应商

SEMICONDUCTOR

DCR3480B52

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CURRENT RATINGS

T

case

= 60° C unless stated otherwise

Symbol

Parameter

Test Conditions Max. Units

Double Side Cooled

I

T(AV)

Mean on-state current Half wave resistive load 3430 A

I

T(RMS)

RMS value - 5388 A

I

T

Continuous (direct) on-state current - 4890 A

SURGE RATINGS

Symbol

Parameter

Test Conditions Max. Units

I

TSM

Surge (non-repetitive) on-state current 10ms half sine, T

case

= 125°C 49.0 kA

I2t I2t for fusing VR = 0 12.0 MA2s

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions Min. Max. Units

R

th(j-c)

Thermal resistance – junction to case Double side cooled DC - 0.007 °C/W

Single side cooled Anode DC - 0.0116 ° C/W

Cathode DC - 0.0181 ° C/W

R

th(c-h)

Thermal resistance – case to heatsink Clamping force 76kN Double side - 0.0014 ° C/W

(with mounting compound) Single side - 0.0028 ° C/W

T

vj

Virtual junction temperature On-state (conducting) - 135 °C

Reverse (blocking) - 125 ° C

T

stg

Storage temperature range -55 125 ° C

F

m

Clamping force 68.0 84.0 kN

SEMICONDUCTOR

DCR3480B52

3/9

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DYNAMIC CHARACTERISTICS

Symbol

Parameter

Test Conditions Min. Max. Units

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125°C - 300 mA

dV/dt Max. linear rate of rise of off-state voltage To 67% V

DRM

, Tj = 125°C, gate open - 1500 V/µs

dI/dt Rate of rise of on-state current From 67% V

DRM

to 2x I

T(AV)

Repetitive 50Hz

- 200 A/µs

Gate source 30V, 10Ω,

Non-repetitive

- 400 A/µs

tr < 0.5µs, Tj = 125°C

V

T(TO)

Threshold voltage – Low l evel 500A to 2400A at T

case

= 125°C - 0.86 V

Threshold voltage – High level 2400A to 7200A at T

case

= 125°C - 0.98 V

r

T

On-state slope resistance – Low level 500A to 2400A at T

case

= 125°C - 0.2533

mΩ

On-state slope resistance – High level 2400A to 7200A at T

case

= 125°C - 0.1886

mΩ

t

gd

Delay time

VD = 67% V

DRM

, gate source 30V, 10Ω

TBD TBD µs

tr = 0.5µs, Tj = 25°C

t

q

Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, 400 750 µs

dVDR/dt = 20V/µs linear

Q

S

Stored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, 2200 5500 µC

I

L

Latching current Tj = 25°C, VD = 5V TBD TBD mA

I

H

Holding current

Tj = 25°C, R

G-K

= ∞, ITM = 500A, IT = 5A

TBD TBD mA