DYNEX DCR1279SD48, DCR1279SD47, DCR1279SD46, DCR1279SD45, DCR1279SD44 Datasheet
DCR1279SD
DCR1279SD
Phase Control Thyristor
Advance Information
Replaces March 1998 version, DS4643-3.2 DS4643-4.0 January 2000
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Mean Current
■ Fatigue Free
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
DCR1279SD48
DCR1279SD47
DCR1279SD46
DCR1279SD45
DCR1279SD44
Lower voltage grades available.
4800
4700
4600
4500
4400
Conditions
Tvj = 0˚ to 125˚C,
I
= I
, V
& V
& V
RRM
RRM tp
= 150mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
respectively
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 300V/
dI/dt 200A/µs
*Higher dV/dt selections available
Outline type code: D.
See package outline for further information.
4800V
1088A
15000A
µs
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load, 1088 A
Half wave resistive load 762 A
UnitsMax.
- 1709 A
- 1574 A
- 1197 A
- 1034 A
1/9
DCR1279SD
CURRENT RATINGS
T
= 80˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load, 860 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 590 A
SURGE RATINGS
Symbol
I
TSM
I2tI
Parameter
Surge (non-repetitive) on-state current
2
t for fusing
10ms half sine; T
= 50% V
V
R
Conditions
- 1350 A
- 1055 A
- 930 A
- 860 A
Max. Units
case
- 1/4 sine
RRM
= 125oC
12.0 kA
0.72 x 10
6
UnitsMax.
A2s
I
TSM
I2tI
Surge (non-repetitive) on-state current
2
t for fusing 1.12 x 106A2s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Parameter
10ms half sine; T
V
R
= 0
= 125oC
case
15.0 kA
Conditions Min. Max. Units
Double side cooled - 0.020
dc
Single side cooled
- 0.044
0.004
-
- 0.008
Clamping force 22.0kN
with mounting compound
Cathode dc
Double side
Single side
On-state (conducting) - 135
-
Reverse (blocking)
125
-55 125
o
C/W
o
C/W- 0.036Anode dc
o
C/W
o
C/W
o
C/W
o
o
o
C
C
C
2/9
-
Clamping force
22.0 24.0 kN
DYNAMIC CHARACTERISTICS
DCR1279SD
Symbol
I
RRM/IDRM
Peak reverse and off-state current At V
Parameter
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 67% V
From 67% V
dI/dt
Rate of rise of on-state current
Gate source 10V, 5Ω
tr ≤ 0.5µs, Tj = 125oC
V
T(TO)
r
T
t
gd
I
L
I
H
Threshold voltage At Tvj = 125oC
On-state slope resistance At Tvj = 125oC
V
= 67% V
Delay time
D
tr = 0.5µs, Tj = 25oC
Latching current Tj = 25oC, VD = 5V
Holding current Tj = 25oC, R
GATE TRIGGER CHARACTERISTICS AND RATINGS
Conditions Typ. Max. Units
, T
= 125oC
case
= 125oC. Gate open circuit.
DRM Tj
to 1000A
DRM
Repetitive 50Hz
Non-repetitive
- 150 mA
- 300 V/µs
- 100 A/µs
- 200 A/µs
- 0.587 mΩ
, Gate source 30V, 15Ω
DRM
- 2.5 µs
300 1000 mA
g-k
= ∞
- 500 mA
ConditionsParameterSymbol
1.14-V
Max. Units
P
V
V
V
V
I
V
I
FGM
P
G(AV)
GT
GT
GD
FGM
FGN
RGM
GM
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 5V, T
= 5V, T
DRM Tcase
= 25oC
case
= 25oC
case
= 125oC
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power See table, fig.4
Mean gate power
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
10 A
150 W
5W
3/9
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