DYNEX DCR1275SD28, DCR1275SD26, DCR1275SD25, DCR1275SD24, DCR1275SD23 Datasheet
DCR1275SD
DCR1275SD
Phase Control Thyristor
Advance Information
Replaces March 1998 version, DS4551-3.3 DS4551-4.0 January 2000
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Mean Current
■ Fatigue Free
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
DCR1275SD28
DCR1275SD26
DCR1275SD25
DCR1275SD24
DCR1275SD23
Lower voltage grades available.
2800
2700
2600
2500
2400
Conditions
Tvj = 0˚ to 125˚C,
I
= I
, V
& V
& V
RRM
RRM tp
= 150mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
respectively
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 300V/
dI/dt 150A/µs
*Higher dV/dt selections available
Outline type code: D.
See Package Details for further information.
2800V
1514A
28000A
µs
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 1514 A
Half wave resistive load 1047 A
UnitsMax.
- 2379 A
- 2148 A
- 1645 A
- 1386 A
1/9
DCR1275SD
CURRENT RATINGS
T
= 80˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 1185 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 805 A
SURGE RATINGS
Symbol
I
TSM
2
tI
I
Parameter
Surge (non-repetitive) on-state current
2
t for fusing
10ms half sine; T
V
= 50% V
R
Conditions
- 1860 A
- 1640 A
- 1265 A
- 1035 A
Max. Units
case
- 1/4 sine
RRM
= 125oC
22.5 kA
2.53 x 10
6
UnitsMax.
A2s
I
TSM
I2t
Surge (non-repetitive) on-state current
2
t for fusing 3.92 x 106A2s
I
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Parameter
10ms half sine; T
V
R
= 0
= 125oC
case
28.0 kA
Conditions Min. Max. Units
Double side cooled
dc
- 0.020
Single side cooled
Cathode dc - 0.044
Clamping force 22.0kN
with mounting compound
Double side
Single side
0.004
-
- 0.008
On-state (conducting) - 135
Reverse (blocking)
125
-
-55 125
o
C/W
o
C/W- 0.036Anode dc
o
C/W
o
C/W
o
C/W
o
o
o
C
C
C
2/9
-
Clamping force
20.0 24.0 kN
DYNAMIC CHARACTERISTICS
DCR1275SD
Symbol
I
RRM/IDRM
Peak reverse and off-state current At V
Parameter
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 67% V
From 67% V
dI/dt
Rate of rise of on-state current
Gate source 10V, 5Ω
tr = 1µs, Tj = 125oC
V
T(TO)
r
T
t
gd
q
I
L
I
H
Threshold voltage At Tvj = 125oC
On-state slope resistance At Tvj = 125oC
V
= 67% V
Delay time
D
tr = 0.5µs, Tj = 25oC
I
= 1000A, tp = 1ms, Tj = 125˚C,
T
V
= 50V, dIRR/dt = 20A/µs,
R
VDR = 67% V
Latching current Tj = 25oC, VD = 5V
Holding current Tj = 25oC, R
Conditions Typ. Max. Units
- 150 mA
- 300 V/µs
- 100 A/µs
- 150 A/µs
DRM Tj
, T
case
= 125oC.
to 1000A
DRM
= 125oC
Repetitive 50Hz
Non-repetitive
- 0.276 mΩ
, Gate source 30V, 15Ω
DRM
, dVDR/dt = 20V/µs linear
DRM
- 1.5 µs
300 1000 mA
g-k
= ∞
200 500 mA
0.92-V
µs650500Turn-off timet
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
P
V
V
V
I
V
I
FGM
P
G(AV)
GT
GT
GD
FGM
FGN
RGM
GM
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 5V, T
= 5V, T
DRM Tcase
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power See table, fig.4
Mean gate power
= 25oC
case
= 25oC
case
= 125oC
ConditionsParameterSymbol
Max. Units
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
10 A
100 W
5W
3/9
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