DYNEX DCR1021SF65, DCR1021SF64, DCR1021SF63, DCR1021SF62, DCR1021SF61 Datasheet

DCR1021SF

1/11

www.dynexsemi.com

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Converters

■ DC Motor Control

■ High Voltage Power Supplies

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table.

For example:

DCR1021SF63

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

KEY PARAMETERS V

DRM

6500V

I

T(AV)

(max) 840A

I

TSM

(max) 14000A

dV/dt 1000V/

µs

dI/dt 100A/

µs

DCR1021SF

Phase Control Thyristor

Target Information

DS5436-1.0 March 2001

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 150mA,

V

DRM

, V

RRM tp

= 10ms,

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available.

6500 6400 6300 6200 6100 6000

DCR1021SF65 DCR0121SF64 DCR1021SF63 DCR1021SF62 DCR1021SF61 DCR1021SF60

Part and Ordering

Number

Repetitive Peak

Voltages

V

DRM

and V

DRM

V

Fig. 1 Package outline

Outline type code: F

(See Package Details for further information)

DCR1021SF

2/11

www.dynexsemi.com

Symbol

I

T(AV)

I

T(RMS)

I

T

I

T(AV)

I

T(RMS)

I

T

CURRENT RATINGS

T

case

= 60˚C unless stated otherwise.

Test Conditions

Half wave resistive load

-

Half wave resistive load

-

Units

A

Max.

840

1320

1230

610

960

845

Parameter

Mean on-state current

RMS value

Continuous (direct) on-state current

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

Double Side Cooled

Symbol

I

T(AV)

I

T(RMS)

I

T

I

T(AV)

I

T(RMS)

I

T

case

= 80˚C unless stated otherwise.

Test Conditions

Half wave resistive load

-

Half wave resistive load

-

Units

A

Max.

670

1050

960

480

750

650

Parameter

Mean on-state current

RMS value

Continuous (direct) on-state current

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

Double Side Cooled

DCR1021SF

3/11

www.dynexsemi.com

Parameter

Surge (non-repetitive) on-state current

I

2

t for fusing

Surge (non-repetitive) on-state current

I

2

t for fusing

Test Conditions

10ms half sine, T

case

= 125˚C

V

R

= 50% V

RRM

- 1/4 sine

10ms half sine, T

case

= 125˚C

V

R

= 0

Symbol

I

TSM

I2t

I

TSM

I2t

SURGE RATINGS

Units

kA

A

2

s

kA

A

2

s

Max.

11.0

0.6 x 10

6

14.0

0.98 x 10

6

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Storage temperature range

Clamping force

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 19.5kN Double side

(with mounting compound) Single side

On-state (conducting)

Reverse (blocking)

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-h)

T

vj

T

stg

F

m

Units

˚CW

˚C

kN

Max.

0.022

0.38

0.52

0.004

0.008

135

125

22.0

Min.

-

–55

18.0

DCR1021SF

4/11

www.dynexsemi.com

Parameter

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Delay time

Turn-off time

Latching current

Holding current

Test Conditions

At V

RRM/VDRM

, T

case

= 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

,

Repetitive 50Hz

Gate source 30V, 15Ω,

Non-repetitive

tr ≤ 0.5µs, Tj = 125˚C

At T

vj

= 125˚C

At T

vj

= 125˚C

V

D

= 67% V

DRM

, gate source 30V, 15Ω

t

r

= 0.5µs, Tj = 25˚C

I

T

= 1000A, tp = 1ms, Tj =125˚C,

V

R

= 100V, dIRR/dt = 10A/µs,

V

DR

= 67% V

DRM

,

dV

DR

/dt = 20V/µs linear

T

j

= 25˚C, VD = 10V

T

j

= 25˚C, V

G–K

= ∞

Symbol

I

RRM/IRRM

dV/dt

dI/dt

V

T(TO)

r

T

t

gd

t

q

I

L

I

H

SURGE RATINGS

Units

mA

V/µs

A/µs

V

mΩ

µs

mA

Max.

150

1000

30

100

1.2

0.98

1.5

-

600

200

Min.

-

0.5

1500

-