Diotec PZT2222, PZT2222A Schematics

PZT2222 / PZT2222A

3.5

±0.2

1.65

7

±0.3

2.3 3.25

0.7

6.5

±0.2

3

±0.1

1

2

3

4

Type
Code

PZT2222 / PZT2222A

NPN

Suface Mount Si-Epitaxial Planar Switching Transistors

Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage

NPN

Version 2006-05-09

Power dissipation

1.3 W

Verlustleistung

Plastic case

SOT-223

Kunststoffgehäuse

Weight approx.

0.04 g

Gewicht ca.

Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert

Dimensions - Maße [mm]

1 = B 2/4 = C 3 = E

Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)

PZT2222 PZT2222A

Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open V

Collector-Base-volt. - Kollektor-Basis-Spannung B open V

Emitter-Base-voltage - Emitter-Basis-Spannung C open V

Power dissipation – Verlustleistung P

Collector current – Kollektorstrom (dc) I

Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur

T

T

CEO

CBO

EBO

tot

C

j

S

30 V 40 V

60 V 75 V

5 V 6 V

1.3 W 1)

600 mA

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Collector-cutoff current – Kollektor-Reststrom

IE = 0, VCB = 50 V PZT2222

PZT2222A

IE = 0, VCB = 50 V, Tj = 150°C PZT2222

PZT2222A

I

CBO

I

CBO

I

CBO

I

CBO

–
–

–
–

–
–

–
–

Emitter-cutoff current – Emitter-Reststrom

IC = 0, VEB = 3 V I

EBO

– –- 10 nA

Collector saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA PZT2222

PZT2222A

IC = 500 mA, IB = 50 mA PZT2222

PZT2222A

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

© Diotec Semiconductor AG http://www.diotec.com/ 1

V
V

V
V

CEsat

CEsat

CEsat

CEsat

–
–

–
–

–
–

–
–

20 nA
10 nA

20 µA
10 µA

0.4 V

0.3 V

1.6 V

1.0 V

PZT2222 / PZT2222A

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Base saturation voltage – Basis-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA PZT2222

PZT2222A

IC = 500 mA, IB = 50 mA PZT2222

PZT2222A

DC current gain – Kollektor-Basis-Stromverhältnis

IC = 0.1 mA, VCE = 10 V

IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V 2)

IC = 500 mA, VCE = 10 V 2) PZT2222

PZT2222A

Gain-Bandwidth Product – Transitfrequenz

IC = 20 mA, VCE = 20 V, f = 100 MHz f

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz C

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz C

Switching times – Schaltzeiten

delay time

I

= 150 mA

rise time

storage time

Con

I

= 15 mA

Bon

- I

Boff

= 15 mA

fall time

Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft

V
V

V
V

BEsat

BEsat

BEsat

BEsat

h
h
h
h

h
h

R

CBO

EBO

t

t

t

t

–
–

–
–

FE

FE

FE

FE

FE

FE

T

35
50
75

100

30
40

200 MHz – –

– – 8 pF

– – 30 pf

d

r

s

f

thA

– – 10 ns

– – 25 ns

– – 225 ns

– – 60 ns

< 93 K/W 1)

–
–

–
–

–
–
–
–

–
–

1.3 V

1.2 V

2.6 V

2.0 V

–
–
–

300

–
–

Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad

Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

R

thS

< 27 K/W

PZT2907, PZT2907A

2 http://www.diotec.com/ © Diotec Semiconductor AG