Diotec PT800A, PT800B, PT800D, PT800G, PT800J Service Manual
...
15.7 13.2
3
3.4
10
±0.2
1.5
0.9
5.08
3.8
Type
Typ
1 2 3
4
1 2 3
4
查询PT800A供应商
PT800A ... PT800M
Version 2007-07-06
PT800A ... PT800M
Silicon Rectifiers – Single Diode
Silizium-Gleichrichter – Einzeldiode
Nominal current
8 A
Nennstrom
Repetitive peak reverse voltage
50...1000 V
Periodische Spitzensperrspannung
Plastic case
TO-220AC
Kunststoffgehäuse
Weight approx.
1.8 g
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Dimensions - Maße [mm]
Standard Lieferform in Stangen
Maximum ratings and Characteristics Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
[V]
RRM
Surge peak reverse voltage
Stoßspitzensperrspannung
V
[V]
RSM
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A IF = 8 A
PT800A 50 50 < 1.0 < 1.1
PT800B 100 100 < 1.0 < 1.1
PT800D 200 200 < 1.0 < 1.1
PT800G 400 400 < 1.0 < 1.1
PT800J 600 600 < 1.0 < 1.1
PT800K 800 800 < 1.0 < 1.1
PT800M 1000 1000 < 1.0 < 1.1
Max. average forward rectified current, R-load
TC = 100°C I
FAV
8 A
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
f > 15 Hz I
FRM
30 A 2)
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
TA = 25°C I
FSM
135/150 A
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
TA = 25°C i2t 90 A2s
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1 Tj = 25°C
2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG http://www.diotec.com/ 1
T
j
T
S
-50...+150°C
-50...+175°C
PT800A ... PT800M
Rated forward current vs. temp. of the case
in Abh. v. d. GehäusetemperaturZul. Richtstrom
120
100
80
60
40
20
0
I
FAV
[%]
[°C]
T
C
150100
50
0
10
10
1
10
10
2
-1
-2
[A]
I
F
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
VF0.8
1.0
1.2
1.4
[V] 1.8
T = 25°C
j
T = 125°C
j
200a-(5a-0.95v)
Characteristics Kennwerte
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Tj = 25°C VR = V
RRM
I
R
R
thC
< 10 µA
< 2.5 K/W
2 http://www.diotec.com/ © Diotec Semiconductor AG
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