BC556xBK ... BC559xBK
2 x 1.27
C
B E
4.6
±0.1
4.6
±0.1
min 12.5
BC556xBK ... BC559xBK
PNP
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
Version 2009-12-07
Power dissipation – Verlustleistung 500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
Dimensions - Maße [mm]
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC556 BC557 BC558/559
Collector-Emitter-voltage E-B short - V
Collector-Emitter-voltage B open - V
Collector-Base-voltage E open - V
CES
CEO
CBO
80 V 50 V 30 V
65 V 45 V 30 V
80 V 50 V 30 V
Emitter-Base-voltage C open - V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (dc) - I
Peak Collector current – Kollektor-Spitzenstrom - I
Peak Base current – Basis-Spitzenstrom - I
Peak Emitter current – Emitter-Spitzenstrom I
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
EB0
tot
C
CM
BM
EM
T
j
T
S
5 V
500 mW 1)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 µA h
- VCE = 5 V, - IC = 2 mA h
- VCE = 5 V, - IC = 100 mA h
FE
FE
FE
typ. 90 typ. 150 typ. 270
110 ... 220 200 ... 450 420 ... 800
typ. 120 typ. 200 typ. 400
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz h
Output admittance – Ausgangs-Leitwert h
Reverse voltage transfer ratio
Spannungsrückwirkung
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
h
© Diotec Semiconductor AG http://www.diotec.com/ 1
1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ
ie
oe
re
18 < 30 µS 30 < 60 µS 60 < 110 µS
typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4
BC556xBK ... BC559xBK
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 80 V, (B-E short)
- VCE = 50 V, (B-E short)
- VCE = 30 V, (B-E short)
- VCE = 80 V, Tj = 125°C, (B-E short)
- VCE = 50 V, Tj = 125°C, (B-E short)
- VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
BC546
BC547
BC548 / BC549
- I
- I
- I
- I
- I
- I
CES
CES
CES
CES
CES
CES
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- V
- V
CEsat
CEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- V
- V
BEsat
BEsat
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
- V
- V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz f
T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz C
CBO
–
–
–
–
–
–
–
–
–
–
600 mV–660 mV–750 mV
BE
BE
0.2 nA
0.2 nA
0.2 nA
–
–
–
80 mV
250 mV
700 mV
900 mV
– 150 MHz –
– 3.5 pF 6 pF
15 nA
15 nA
15 nA
4 µA
4 µA
4 µA
300 mV
650 mV
–
–
800 mV
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz C
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
EB0
F
F
R
thA
– 10 pF –
–
–
2 dB
1 dB
10 dB
4 dB
< 200 K/W 1)
BC546 ... BC549
BC556A
BC557A
BC558A
BC556B
BC557B
BC558B
BC559B
BC557C
BC558C
BC559C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG
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