BC546 ... BC549
BC546 ... BC549
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-31
Power dissipation – Verlustleistung 500 mW
Plastic case
C
16
BE
9
18
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
= 25°C) Grenzwerte (TA = 25°C)
A
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Collector-Emitter-voltage E-B short V
Collector-Emitter-voltage B open V
Collector-Base-voltage E open V
Emitter-Base-voltage C open V
CES
CEO
CBO
EB0
NPN
TO-92
(10D3)
BC546 BC547 BC548/549
85 V 50 V 30 V
65 V 45 V 30 V
80 V 50 V 30 V
5 V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (dc) I
Peak Collector current – Kollektor-Spitzenstrom I
Peak Base current – Basis-Spitzenstrom I
Peak Emitter current – Emitter-Spitzenstrom - I
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (T
DC current gain – Kollektor-Basis-Stromverhältnis
V
= 5 V, IC = 10 µA h
CE
V
= 5 V, IC = 2 mA h
CE
V
= 5 V, IC = 100 mA h
CE
h-Parameters at/bei V
Small signal current gain
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz h
= 25°C) Kennwerte (Tj = 25°C)
j
2
)
FE
FE
FE
= 5 V, IC = 2 mA, f = 1 kHz
CE
h
fe
ie
tot
C
CM
BM
EM
T
j
T
S
500 mW 1)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Group A Group B Group C
typ. 90 typ. 150 typ. 270
110 ... 220 200 ... 450 420 ... 800
typ. 120 typ. 200 typ. 400
typ. 220 typ. 330 typ. 600
1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert h
Reverser voltage transfer ratio
Spannungsrückwirkung
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG http://www.diotec.com/
oe
h
re
18 < 30 µS 30 < 60 µS 60 < 110 µS
typ. 1.5*10
-4
typ. 2*10
-4
typ. 3*10
-4
1
BC546 ... BC549
Characteristics (T
= 25°C) Kennwerte (Tj = 25°C)
j
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
V
= 80 V, (B-E short)
CE
V
= 50 V, (B-E short)
CE
V
= 30 V, (B-E short)
CE
V
= 80 V, Tj = 125°C, (B-E short)
CE
V
= 50 V, Tj = 125°C, (B-E short)
CE
V
= 30 V, Tj = 125°C, (B-E short)
CE
BC546
BC547
BC548 / BC549
BC546
BC547
BC548 / BC549
I
I
I
I
I
I
Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg.
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base saturation voltage – Basis-Sättigungsspannung
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base-Emitter-voltage – Basis-Emitter-Spannung
V
= 5 V, IC = 2 mA
CE
V
= 5 V, IC = 10 mA
CE
2
)
2
)
V
V
V
V
V
V
Gain-Bandwidth Product – Transitfrequenz
CES
CES
CES
CES
CES
CES
CEsat
CEsat
BEsat
BEsat
BE
BE
Min. Typ. Max.
–
–
–
–
–
–
2
)
–
–
–
–
0.2 nA
0.2 nA
0.2 nA
–
–
–
80 mV
200 mV
700 mV
900 mV
580 mV–660 mV–700 mV
15 nA
15 nA
15 nA
4 µA
4 µA
4 µA
200 mV
600 mV
–
–
720 mV
V
= 5 V, IC = 10 mA, f = 100 MHz f
CE
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
= 10 V, IE =ie = 0, f = 1 MHz C
CB
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
= 0.5 V, IC = ic = 0, f = 1 MHz C
EB
Noise figure – Rauschzahl
V
= 5 V, IC = 200 µA, RG = 2 kΩ
CE
f = 1 kHz, Δf = 200 Hz
BC546 / BC547
BC548 / BC549
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
T
CBO
EB0
F
F
R
thA
– 300 MHz –
– 3.5 pF 6 pF
–9 pF–
–
–
2 dB
1.2 dB
10 dB
4 dB
< 200 K/W 1)
BC556 ... BC559
BC546A
BC547A
BC548A
BC546B
BC547B
BC548B
BC549B
BC547C
BC548C
BC549C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG
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