DIODS GBJ806, GBJ804, GBJ802, GBJ801, GBJ8005 Datasheet
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Features
Glass Passivated Die Construction
·
High Case Dielectric Strength of 1500V
·
Low Reverse Leakage Current
·
Surge Overload Rating to 170A Peak
·
Ideal for Printed Circuit Board Applications
·
Plastic Material - UL Flammability
·
Classification 94V-0
UL Listed Under Recognized Component
·
Index, File Number E94661
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads, Solderable per
·
MIL-STD-202, Method 208
Polarity: Molded on Body
·
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx.)
· Marking: Type Number
RMS
GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ
Dim Min Max
29.70 30.30
A
19.70 20.30
B
17.00 18.00
L
K
A
B
_
J
H
I
EEG
D
C
M
S
N
P
R
C
3.80 4.20
D
7.30 7.70
E
9.80 10.20
G
2.00 2.40
H
0.90 1.10
I
2.30 2.70
J
K
L
M
N
P
R
S
All Dimensions in mm
3.0 X 45°
4.40 4.80
3.40 3.80
3.10 3.40
2.50 2.90
0.60 0.80
10.80 11.20
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
Non-Repetitive Peak Forward Surge Current, 8.3ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element @ IF= 4.0A
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
@ T
= 110°C
C
= 125°C
C
V
V
V
V
R(RMS)
I
FSM
V
R
T
j,TSTG
GBJ
8005
RRM
RWM
R
I
O
FM
I
R
2
I
t 120 A2s
C
j
qJC
@ TA= 25°C unless otherwise specified
GBJ
801
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
GBJ
802
GBJ
804
170 A
500
-65 to +150 °C
GBJ
806
8.0 A
1.0 V
5.0
55 pF
1.6 °C/W
GBJ
808
GBJ
810
Unit
mA
DS21217 Rev. D-2 1 of 2 GBJ8005-GBJ810
10
g
)
180
g
g
1000
g
10
I , AVERAGE RECTIFIED CURRENT (A)
g
8
With heatsink
1.0
6
4
0.1
Without heatsink
2
O
Resistive or
0
Inductive load
25
50
T , CASE TEMPERATURE ( C)
Fi
. 1 Forward Current DeratingCurve
75
C
100
125 150
°
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
0 0.4 0.8 1.2 1.6 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics(per element
T = 25 Cj°
Pulse width = 300 sµ
FSM
I , PEAK FWD SURGE CURRENT (A)
160
120
80
40
0
Single half-sine-wave
(JEDEC method)
1
10
NUMBER OF CYCLES AT 60 Hz
. 3 Maximum Non-Repetitive Surge Current
Fi
A)
µ
(
100
CURRENT
10
REVERSE
T = 150 Cj°
T = 125 Cj°
T = 100 Cj°
100
100
10
j
C , JUNCTION CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
T = 25 C
j
f = 1MHz
°
1.0
R
I , INSTANTANEOUS
0.1
T = 50 Cj°
T = 25 Cj°
02040 6080
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS21217 Rev. D-2 2 of 2 GBJ8005-GBJ810
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