DIODS GBJ2502, GBJ2501, GBJ25005, GBJ2510, GBJ2508 Datasheet

Features

Glass Passivated Die Construction

·

High Case Dielectric Strength of 1500V

·

Low Reverse Leakage Current

·

Surge Overload Rating to 350A Peak

·

Ideal for Printed Circuit Board Applications

·

Plastic Material - UL Flammability

·

Classification 94V-0
UL Listed Under Recognized Component

·

Index, File Number E94661

Mechanical Data

Case: Molded Plastic

·

Terminals: Plated Leads, Solderable per

·

MIL-STD-202, Method 208
Polarity: Molded on Body

·

· Mounting: Through Hole for #6 Screw

· Mounting Torque: 5.0 in-lbs Maximum

· Weight: 6.6 grams (approx)

· Marking: Type Number

RMS

GBJ25005 - GBJ2510

25A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ

Dim Min Max

A 29.70 30.30

L

K

A

B

_

S

J

D

H

C

I

M

P

R

EEG

B 19.70 20.30

C 17.00 18.00

D 3.80 4.20

E 7.30 7.70

G 9.80 10.20

N

H 2.00 2.40

I 0.90 1.10

J 2.30 2.70

K 3.0 X 45°

L 4.40 4.80

M 3.40 3.80

N 3.10 3.40

P 2.50 2.90

R 0.60 0.80

S 10.80 11.20

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Forward Rectified Output Current
(Note 1) @ T

Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage (per element) @ IF= 12.5A

Peak Reverse Current @TC= 25°C
at Rated DC Blocking Voltage @ T

I2t Rating for Fusing (t < 8.3ms) (Note 1)

Typical Junction Capacitance (per element) (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.

= 100°C

C

= 125°C

C

V
V

V

R(RMS)

I

V

R

T

j,TSTG

V

FSM

GBJ

25005

RRM
RWM

I

O

FM

I

R

2

I

C

qJC

50 100 200 400 600 800 1000 V

R

35 70 140 280 420 560 700 V

t 510 A2s

j

@ TA= 25°C unless otherwise specified

GBJ

2501

GBJ
2502

GBJ

2504

350 A

1.05 V

500

-65 to +150 °C

GBJ

2506

25 A

10

85 pF

0.6 °C/W

GBJ

2508

GBJ

2510

Unit

µA

DS21221 Rev. D-2 1 of 2 GBJ25005-GBJ2510

g

)

100

g

1000

g

1000

g

25

30

g

with heatsink

T = 25°C

j

I , AVERAGE RECTIFIED CURRENT (A)

20

10

15

1.0

10

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.1

0.01

0 0.4 0.8 1.2 1.6

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fi

.2 Typical Forward Characteristics(pFer element

100

Pulse width = 300µs

T = 25°C

J

f = 1MHz

2.0

without heatsink

5

O

Resistive or

Inductive load

0

25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

C

Fi

. 1 Forward Current DeratingCurve

Single half-sine-wave

400

(JEDEC method)

T = 25°C

j

300

200

I , PEAK FORWARD SURGE CURRENT (A)

FSM

100

0

1

10

NUMBER OF CYCLES AT 60 Hz

. 3 Maximum Non-Repetitive Surge Current

Fi

R

I , INSTANTANEOUS REVERSE CURRENT (µA)

100

T = 150°C

j

T = 125°C

100

j

T = 100°C

j

10

1.0

T = 25°C

j

0.1
02040 6080

j

C , JUNCTION CAPACITANCE (pF)

10

1

1.0

100

V , REVERSE VOLTAGE (V)

R

Fi

.4 Typical Junction Capacitance

120

140

10 100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

.5 Typical Reverse Characteristics

Fi

DS21221 Rev. D-2 2 of 2 GBJ25005-GBJ2510