DIODS GBJ2502, GBJ2501, GBJ25005, GBJ2510, GBJ2508 Datasheet
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Features
Glass Passivated Die Construction
·
High Case Dielectric Strength of 1500V
·
Low Reverse Leakage Current
·
Surge Overload Rating to 350A Peak
·
Ideal for Printed Circuit Board Applications
·
Plastic Material - UL Flammability
·
Classification 94V-0
UL Listed Under Recognized Component
·
Index, File Number E94661
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads, Solderable per
·
MIL-STD-202, Method 208
Polarity: Molded on Body
·
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx)
· Marking: Type Number
RMS
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ
Dim Min Max
A 29.70 30.30
L
K
A
B
_
S
J
D
H
C
I
M
P
R
EEG
B 19.70 20.30
C 17.00 18.00
D 3.80 4.20
E 7.30 7.70
G 9.80 10.20
N
H 2.00 2.40
I 0.90 1.10
J 2.30 2.70
K 3.0 X 45°
L 4.40 4.80
M 3.40 3.80
N 3.10 3.40
P 2.50 2.90
R 0.60 0.80
S 10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element) @ IF= 12.5A
Peak Reverse Current @TC= 25°C
at Rated DC Blocking Voltage @ T
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance (per element) (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
= 100°C
C
= 125°C
C
V
V
V
R(RMS)
I
V
R
T
j,TSTG
V
FSM
GBJ
25005
RRM
RWM
I
O
FM
I
R
2
I
C
qJC
50 100 200 400 600 800 1000 V
R
35 70 140 280 420 560 700 V
t 510 A2s
j
@ TA= 25°C unless otherwise specified
GBJ
2501
GBJ
2502
GBJ
2504
350 A
1.05 V
500
-65 to +150 °C
GBJ
2506
25 A
10
85 pF
0.6 °C/W
GBJ
2508
GBJ
2510
Unit
µA
DS21221 Rev. D-2 1 of 2 GBJ25005-GBJ2510
g
)
100
g
1000
g
1000
g
25
30
g
with heatsink
T = 25°C
j
I , AVERAGE RECTIFIED CURRENT (A)
20
10
15
1.0
10
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.01
0 0.4 0.8 1.2 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fi
.2 Typical Forward Characteristics(pFer element
100
Pulse width = 300µs
T = 25°C
J
f = 1MHz
2.0
without heatsink
5
O
Resistive or
Inductive load
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
C
Fi
. 1 Forward Current DeratingCurve
Single half-sine-wave
400
(JEDEC method)
T = 25°C
j
300
200
I , PEAK FORWARD SURGE CURRENT (A)
FSM
100
0
1
10
NUMBER OF CYCLES AT 60 Hz
. 3 Maximum Non-Repetitive Surge Current
Fi
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
100
T = 150°C
j
T = 125°C
100
j
T = 100°C
j
10
1.0
T = 25°C
j
0.1
02040 6080
j
C , JUNCTION CAPACITANCE (pF)
10
1
1.0
100
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
120
140
10 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS21221 Rev. D-2 2 of 2 GBJ25005-GBJ2510
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