DIODS GBJ2010, GBJ2008, GBJ2006, GBJ2004, GBJ2002 Datasheet
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Features
Glass Passivated Die Construction
·
High Case Dielectric Strength of 1500V
·
Low Reverse Leakage Current
·
Surge Overload Rating to 240A Peak
·
Ideal for Printed Circuit Board Applications
·
Plastic Material - UL Flammability
·
Classification 94V-0
UL Listed Under Recognized Component
·
Index, File Number E94661
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads, Solderable per
·
MIL-STD-202, Method 208
Polarity: Molded on Body
·
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx)
· Marking: Type Number
RMS
GBJ20005 - GBJ2010
20A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ
Dim Min Max
A 29.70 30.30
B 19.70 20.30
L
K
J
H
I
A
B
_
EEG
S
D
C
M
P
R
C 17.00 18.00
D 3.80 4.20
E 7.30 7.70
G 9.80 10.20
H 2.00 2.40
N
I 0.90 1.10
J 2.30 2.70
K 3.0 X 45°
L 4.40 4.80
M 3.40 3.80
N 3.10 3.40
P 2.50 2.90
R 0.60 0.80
S 10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element @ IF= 10A
Peak Reverse Current @ TA= 25°C
at Rated DC Blocking Voltage @ T
I2t Rating for Fusing (t < 8.3 ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
= 125°C
C
V
V
V
V
R(RMS)
I
FSM
V
R
T
j,TSTG
GBJ
20005
RRM
RWM
I
O
FM
I
R
2
I
C
qJC
50 100 200 400 600 800 1000 V
R
35 70 140 280 420 560 700 V
t 240 A2s
j
@ TA= 25°C unless otherwise specified
GBJ
2001
GBJ
2002
GBJ
2004
1.05 V
-65 to +150 °C
GBJ
2006
20 A
240 A
10
500
60 pF
0.8 °C/W
GBJ
2008
GBJ
2010
Unit
µA
DS21220 Rev. D-2 1 of 2 GBJ20005-GBJ2010
g
)
100
g
250
100
g
1000
g
g
2
5
I , AVERAGE RECTIFIED CURRENT (A)
20
With heatsink
10
15
1.0
10
Resistive or
Inductive load
25
Without heatsink
50
T , CASE TEMPERATURE (°C)
Fi
. 1 Forward Current DeratingCurve
75
C
100
Single half-sine-wave
(JEDEC method)
125 150
T = 25°C
j
5
O
0
200
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.01
T = 25°C
j
Pulse width = 300µs
0
0.4 0.8 1.2 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics(per element
T = 25°C
j
f = 1MHz
2.0
150
10
100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
50
0
1
10
100
j
C , JUNCTION CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
. 3 Maximum Non-Repetitive Surge Current
Fi
100
T = 125°C
j
R
Fi
.4 Typical Junction Capacitance
T = 100°C
j
10
T = 50°C
1.0
j
T = 25°C
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
0.1
02040 6080
j
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS21220 Rev. D-2 2 of 2 GBJ20005-GBJ2010
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