DIODS DT455N Datasheet
Features
High Cell Density DMOS Technology
·
Low On-State Resistance
·
High Power and Current Capability
·
Fast Switching Speed
·
High Transient Tolerance
·
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
C D
J
DT455N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
SOT-223
Dim Min Max
A
B
D
D
G
K
S
E
G
H
L
M
P
N
S
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
J 1.55 1.80
R
K 0.025 0.102
L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current Note 1a Continuous
Maximum Power Dissipation Note 1a
Operating and Storage Temperature Range
25°C unless otherwise specified
Characteristic Symbol Value Unit
Pulsed
Note 1b
Note 1c
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction-to-Ambient Note 1
Thermal Resistance, Junction-to-Case
Notes: 1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
QJA
the solder mounting surface of the drain pins. R
1a. With 1 in
1b. With 0.0066 in2oz 2 oz. copper mounting pad R
1c. With 0.0123 in2oz 2 oz. copper mounting pad R
2
oz 2 oz. copper mounting pad R
V
DSS
V
GSS
I
D
P
d
T
j,TSTG
R
QJA
R
QJC
is guaranteed by design while R
QJC
QJA = 42°C/W.
QJA = 95°C/W.
QJA = 110°C/W.
30 V
20 V
±11.5
±40
3.0
1.3
1.1
-65 to +150 °C
42 °C/W
12 °C/W
is determined by the user’s board design.
QCA
A
W
DS11609 Rev. C-4 1 of 4 DT455N
Electrical Characteristics
25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
T
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
j =55°C
BV
DSS
30 — — V
IDSS — —
I
GSSF
I
GSSR
— — 100 nA
— — -100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
T
= 125°C
j
T
= 125°C
j
On-State Drain Current
Forward Transconductance
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
1.0
0.7
—
30
15
—26— m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
— 1220 — pF
— 715 — pF
— 280 — pF
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
Q
gs
Q
gd
—1120ns
—1630ns
—4880ns
—4070ns
g
—4661nC
— 4.0 — nC
—11—nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
I
S
V
SD
t
rr
— — 2.5 A
— 0.845 1.2 V
— — 140 ns
1.5
0.9
0.013
0.019
0.018
1.0
10
3.0
2.2
0.015
0.03
0.02
µA
V
W
—— A
= 0V, ID= 250µA
V
GS
= 24V, VGS=0V
V
DS
= 20V, VDS=0V
V
GS
= -20V, VDS=0V
V
GS
= 10V, R
= 250µA
= 6.0W
GEN
V
DS=VGS,ID
= 10V, ID= 11.5A
V
GS
V
= 10V, ID= 11.5A
GS
VGS = 4.5V, ID = 10A
VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V
= 10V, ID= 11.5A
V
DS
V
= 15V, VGS=0V
DS
f = 1.0MHz
= 15V, ID= 1.0A
V
DD
V
GEN
= 10V. ID= 11.5A.
V
DS
V
= 10V
GS
= 0V, IS= 2.5A (Note 2)
V
GS
= 0V, IF= 2.5A
V
GS
dl
/dt = 100 A/µs
p
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
DS11609 Rev. C-4 2 of 4 DT455N
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