DIODS DT410EL Datasheet
Features
High Cell Density DMOS Technology
·
Low On-State Resistance
·
High Power and Current Capability
·
Fast Switching Speed
·
High Transient Tolerance
·
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
C D
J
DT410EL
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
SOT-223
Dim Min Max
6.30 6.71
A
B
D
D
G
E
K
S
G
H
L
M
P
N
S
A
2.90 3.10
B
6.71 7.29
C
3.30 3.71
D
2.22 2.35
E
0.92 1.00
G
1.10 1.30
H
1.55 1.80
J
R
All Dimensions in mm
K
L
M
N
P
R
S
0.025 0.102
0.66 0.79
4.55 4.70
— 10°
10° 16°
0.254 0.356
10° 16°
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current Note 1a Continuous
Maximum Power Dissipation Note 1a
Operating and Storage Temperature Range
25°C unless otherwise specified
Characteristic Symbol Value Unit
Pulsed
Note 1b
Note 1c
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction-to-Ambient Note 1
Thermal Resistance, Junction-to-Case
Notes: 1. R
the solder mounting surface of the drain pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
QJA
1a. With 1 in
1b. With 0.0066 in2oz 2 oz. copper mounting pad R
1c. With 0.0123 in2oz 2 oz. copper mounting pad R
2
oz 2 oz. copper mounting pad R
QJC
V
DSS
V
GSS
I
D
P
d
T
j,TSTG
R
QJA
R
QJC
is guaranteed by design while R
QJA = 42°C/W.
QJA = 95°C/W.
QJA = 110°C/W.
100 V
±20 V
±2.1
±10
3.0
1.3
1.1
-65 to +150 °C
42 °C/W
12 °C/W
is determined by the user’s board design.
QCA
A
W
DS11601 Rev.C-4 1 of 4 DT410EL
Electrical Characteristics
25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche
Current
W
DSS
I
AR
— — 15 mJ
— — 10 A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
T
j
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
=55°C
BV
I
I
GSSF
I
GSSR
DSS
DSS
100 — — V
—
—
— — 100 nA
— — -100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
T
= 125°C
j
T
= 125°C
j
On-State Drain Current
Forward Transconductance
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
1.0
0.65
—
10 — — A
— 6.0 — m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
— 528 — pF
—85—pF
—20—pF
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
t
D(OFF)
t
Q
Q
Q
— 9.0 20 ns
r
— 72 120 ns
—4980ns
f
g
gs
gd
—4780ns
—1016nC
— 1.5 — nC
— 5.6 — nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
I
S
V
SD
t
rr
— — 2.3 A
— — 1.3 V
— — 150 ns
—
—
1.5
1.1
0.2
0.37
1.0
10
2.0
1.5
0.25
0.50
µA
= 50V, ID= 10A
V
DD
= 0V, ID= 250µA
V
GS
VDS = 80V, V
= 20V, VDS= 0V
V
GS
= -20V, VDS= 0V
V
GS
V
W
V
DS=VGS
= 5.0V, ID= 2.1A
V
GS
= 5.0V, VDS= 5.0V
V
GS
= 10V, ID= 2.1A
V
GS
= 25V, VGS= 0V
V
DS
f = 1.0MHz
V
= 50V, ID= 2.1A
DD
V
= 5.0V, R
GEN
V
= 80V, ID= 2.1A.
DS
V
= 5.0V
GS
= 0V, IS= 2.3A (Note 2)
V
GS
= 0V, IF= 2.3A,
V
GS
dl
/ dt = 100A / µs
F
= 0V
GS
, ID= 250µA
= 25W
GEN
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
DS11601 Rev.C-4 2 of 4 DT410EL
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