DIODS DMMT3906W Datasheet

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

· Epitaxial Planar Die Construction

TCUDORPWEN

· Intrinsically Matched PNP Pair (Note 1)

· Small Surface Mount Package

· 2% Matched Tolerance, hFE, V

CE(SAT)

, V

· 1% Matched Tolerance Available (Note 2)

Mechanical Data

· Case: SOT-363, Molded Plastic

· Case Material - UL Flammability Rating

Classification 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking (See Below): K4B

· Weight: 0.015 grams (approx.)

· Ordering & Date Code Information: See Below

BE(SAT)

K

J

A

C2E2E

B2B1C

G
H

D

DMMT3906W

SOT-363

Dim Min Max

A

B

C

D

F

H

J

K

L

M

a

0.10 0.30

1.15 1.35

2.00 2.20

0.65 Nominal

0.30 0.40

1.80 2.20

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

8°

1

C

B

1

M

L

F

All Dimensions in mm

Maximum Ratings

Characteristic Symbol DMMT3906W Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient (Note 3)

Operating and Storage and Temperature Range

Ordering Information

Device

DMMT3906W-7

Notes: 1. Built with adjacent die from a single wafer.

2. Contact the Diodes, Inc. Sales department.

3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

@ TA= 25°C unless otherwise specified

(Note 4)

Packaging Shipping

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

T

j,TSTG

SOT-363 3000/Tape & Reel

-40 V

-40 V

-5.0 V

-200 mA

200

625 °C/W

-55 to +150 °C

mW

Marking Information

K4B = Product Type Marking Code
YM = Date Code Marking

K4B

Y = Year ex: N = 2002

YM

M = Month ex: 9 = September

Date Code Key

Year 2002 2003 2004 2005 2006

Code

Month Jan Feb March Apr May Jun Jul

Code

NPRS T

1234567

Aug Sep Oct Nov Dec

89 OND

2007 2008

UV

DS30312 Rev. 3 - 2 1 of 3 DMMT3906W

www.diodes.com

Electrical Characteristics

@ TA = 25°C unless otherwise specified

TCUDORPWEN

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 5)

DC Current Gain (Note 6)

Collector-Emitter Saturation Voltage (Note 6)

Base-Emitter Saturation Voltage (Note 6)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

Noise Figure

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

h

V

CE(SAT)

V

BE(SAT)

C

C

h

h

h

h

BL

FE

obo

ibo

oe

f

T

ie

re

fe

-40 ¾ V

-40 ¾ V

-5.0 ¾ V

¾ -50 nA

¾ -50 nA

60
80

100

60
30

¾

-0.65

¾

¾
¾

300

¾
¾

-0.25

-0.40

-0.85

-0.95

¾ 4.5 pF

¾ 10 pF

2.0 12 kW

0.1 10 x 10

100 400 ¾

3.0 60 mS

250 ¾ MHz

NF ¾ 4.0 dB

t

d

t

r

t

s

t

f

¾ 35 ns

¾ 35 ns

¾ 225 ns

¾ 75 ns

= -10mA, IE = 0

I

C

IC= -1.0mA, IB = 0

= -10mA, IC = 0

I

E

VCE= -30V, V

= -30V, V

V

CE

I

= -100µA, VCE= -1.0V

C

IC = -1.0mA, VCE = -1.0V

= -10mA, VCE = -1.0V

I

¾

V

V

C

= -50mA, VCE= -1.0V

I

C

= -100mA, VCE = -1.0V

I

C

IC= -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA

= -10mA, IB = -1.0mA

I

C

I

= -50mA, IB = -5.0mA

C

V

= -5.0V, f = 1.0MHz, IE = 0

CB

VEB = -0.5V, f = 1.0MHz, IC = 0

-4

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

VCE = -20V, IC = -10mA,
f = 100MHz

= -5.0V, IC = -100mA,

V

CE

R

= 1.0kW, f = 1.0kHz

S

= -3.0V, IC = -10mA,

V

CC

= 0.5V, IB1 = -1.0mA

V

BE(off)

V

= -3.0V, IC = -10mA,

CC

IB1 = IB2 = -1.0mA

EB(OFF)

EB(OFF)

= -3.0V

= -3.0V

Notes: 5. Short duration test pulse used to minimize self-heating effect.

6. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector-Emitter Saturation Voltage, V

Base-Emitter Saturation Voltage, V

are matched with typical matched tolerances of 1% and maximum of 2%.

BE(sat)

CE (sat)

, and

DS30312 Rev. 3 - 2 2 of 3 DMMT3906W

www.diodes.com