DIODS DMMT3906-7 Datasheet
Features
Epitaxial Planar Die Construction
·
Intrinsically Matched PNP Pair (Note 1)
·
Small Surface Mount Package
·
2% h
·
1% h
·
Matched Tolerance
FE
Matched Tolerance On Request
FE
Mechanical Data
Case: SOT-26, Molded Plastic
·
Case Material - UL Flammability Rating
·
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
·
NEW PRODUCT
Method 208
Terminal Connections: See Diagram
·
Marking: K3Q
·
Weight: 0.015 grams (approx.)
·
Ordering Information: See Below
·
Maximum Ratings
DMMT3906
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-26
K
J
@ TA= 25°C unless otherwise specified
A
B
C
1
E
1
C
1,2
2
C
B
NC
E
2
H
L
FD
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
¾¾0.95
F
¾¾0.55
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
M
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
All Dimensions in mm
Characteristic Symbol DMMT3906 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Ordering Information
Device
DMMT3906-7
Notes: 1. Built with adjacent die from a single wafer.
2.Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 3)
Marking Information
K3Q
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j,TSTG
Packaging Shipping
SOT-26 3000/Tape & Reel
K3Q = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year ex: N = 2002
M = Month ex: 9 = September
-40 V
-40 V
-5.0 V
-200 mA
225
556 °C/W
-55 to +150 °C
mW
Date Code Key
Year 1998 1999 2000 2001 2002
Code JKLM N
Month Jan Feb March Apr May Jun Jul
Code 1234567
Aug Sep Oct Nov Dec
89 OND
2003 2004
OP
DS30293 Rev. A-2 1 of 3 DMMT3906
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
NEW PRODUCT
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
BL
FE
obo
ibo
re
fe
oe
f
T
ie
-40 ¾ VI
-40 ¾ V
-5.0 ¾ VI
¾ -50 nA
¾ -50 nA
60
80
100
60
30
¾
-0.65
¾
¾ 4.5 pF
¾ 10 pF
2.0 12 kW
0.1 10 x 10
100 400 ¾
3.0 60 mS
250 ¾ MHz
NF ¾ 4.0 dB
t
d
t
r
t
s
t
f
¾ 35 ns
¾ 35 ns
¾ 225 ns
¾ 75 ns
¾
¾
300
¾
¾
-0.25
-0.40
-0.85
-0.95
¾
V
V
= -10mA, IE= 0
C
= -1.0mA, IB= 0
I
C
= -10mA, IC= 0
E
= -30V, V
V
CE
= -30V, V
V
CE
I
= -100µA, VCE= -1.0V
C
I
= -1.0mA, VCE= -1.0V
C
I
= -10mA, VCE= -1.0V
C
I
= -50mA, VCE= -1.0V
C
I
= -100mA, VCE= -1.0V
C
= -10mA, IB= -1.0mA
I
C
I
= -50mA, IB= -5.0mA
C
= -10mA, IB= -1.0mA
I
C
I
= -50mA, IB= -5.0mA
C
= -5.0V, f = 1.0MHz, IE= 0
V
CB
= -0.5V, f = 1.0MHz, IC= 0
V
EB
-4
V
= 10V, IC= 1.0mA,
CE
f = 1.0kHz
= -20V, IC= -10mA,
V
CE
f = 100MHz
= -5.0V, IC= -100mA,
V
CE
R
= 1.0kW, f = 1.0kHz
S
= -3.0V, IC= -10mA,
V
CC
V
BE(off)
= -3.0V, IC= -10mA,
V
CC
I
= IB2= -1.0mA
B1
= -3.0V
EB(OFF)
= -3.0V
EB(OFF)
= 0.5V, IB1= -1.0mA
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. The DC current gain, h
, is matched at IC= -10mA and VCE= -1.0V with typical matched tolerances of 1% and maximum of 2%.
FE
DS30293 Rev. A-2 2 of 3 DMMT3906
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