DIODS DMMT3904W Datasheet
Features
· Epitaxial Planar Die Construction
TCUDORPWEN
· Intrinsically Matched NPN Pair (Note 1)
· Small Surface Mount Package
· 2% Matched Tolerance, h
, V
FE
CE(SAT)
· 1% Matched Tolerance, Available (Note 2)
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): K4A
· Marking Code & Date Code
Information: See Page 2
· Weight: 0.015 grams (approx.)
, V
DMMT3904W
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
SOT-363
Dim Min Max
A
B
C
D
F
H
J
K
L
M
a
All Dimensions in mm
BE(SAT)
K
J
A
C2E2E
B2B1C
G
H
D
1
C
B
1
M
L
F
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
8°
Maximum Ratings
Characteristic Symbol DMMT3904W Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Ordering Information
Device
DMMT3904W-7
Notes: 1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
@ TA= 25°C unless otherwise specified
(Note 4)
Packaging Shipping
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j,TSTG
SOT-363 3000/Tape & Reel
60 V
40 V
6.0 V
200 mA
200
625 °C/W
-55 to +150 °C
mW
DS30311 Rev. 3 - 2 1 of 3 DMMT3904W
www.diodes.com
Electrical Characteristics
@ TA = 25°C unless otherwise specified
TCUDORPWEN
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
BL
FE
obo
ibo
re
fe
oe
f
T
ie
60 ¾ V
40 ¾ V
6.0 ¾ V
¾ 50 nA
¾ 50 nA
40
70
100
60
30
¾
0.65
¾
¾
¾
300
¾
¾
0.20
0.30
0.85
0.95
¾ 4.0 pF
¾ 8.0 pF
1.0 10 kW
0.5 8 x 10
100 400 ¾
1.0 40 mS
300 ¾ MHz
NF ¾ 5.0 dB
t
d
t
r
t
s
t
f
¾ 35 ns
¾ 35 ns
¾ 200 ns
¾ 50 ns
= 10mA, IE = 0
I
C
IC= 1.0mA, IB = 0
= 10mA, IC = 0
I
E
VCE= 30V, V
= 30V, V
V
CE
I
= 100µA, VCE= 1.0V
C
IC = 1.0mA, VCE = 1.0V
= 10mA, VCE = 1.0V
I
¾
V
V
C
= 50mA, VCE= 1.0V
I
C
= 100mA, VCE = 1.0V
I
C
IC= 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
V
= 5.0V, f = 1.0MHz, IE = 0
CB
VEB = 0.5V, f = 1.0MHz, IC = 0
-4
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
= 5.0V, IC = 100mA,
V
CE
R
= 1.0kW, f = 1.0kHz
S
= 3.0V, IC = 10mA,
V
CC
= -0.5V, IB1 = 1.0mA
V
BE(off)
V
= 3.0V, IC = 10mA,
CC
IB1 = IB2 = 1.0mA
EB(OFF)
EB(OFF)
= 3.0V
= 3.0V
Notes: 5. Short duration test pulse used to minimize self-heating effect.
6. The DC current gain, hFE, (matched at IC = 10mA and VCE = 1.0V) Collector Emitter Saturation Voltage, V
Emitter Saturation Voltage, V
are matched with typical matched tolerances of 1% and maximum of 2%.
BE(SAT)
Marking Information
KJG = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
2007 2008
UV
Aug Sep Oct Nov Dec
89 OND
Date Code Key
Year 2002 2003 2004 2005 2006
Code
Month Jan Feb March Apr May Jun Jul
Code
K4A
NPRS T
1234567
CE(SAT)
, and Base
DS30311 Rev. 3 - 2 2 of 3 DMMT3904W
www.diodes.com
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