DIODS DMDT9922 Datasheet

Features

Epitaxial Planar Die Construction

·

Low Noise

·

High Current Gain

·

Matched Pair of Transistors

·

Mechanical Data

Case: SOT-363, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections: See Diagram

·

Marking: K3S

·

Weight: .006 grams (approx.)

·

ADVANCE INFORMATION

DMDT9922

PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR

SOT-363

Dim Min Max

A

B

C

D

F

H

J

M

K

L

M

All Dimensions in mm

0.10 0.30

1.15 1.35

2.00 2.20

0.65 Nominal

0.30 0.40

1.80 2.20

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

K

J

A

C2B1E

KXX

E2B2C

H

1

C

B

1

L

FD

Maximum Ratings

Characteristic Symbol DMDT9922 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector-Collector Voltage

Emitter-Emitter Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

@ TA= 25°C unless otherwise specified

V

V

V

V

V

R

T

j,TSTG

CBO

CEO

EBO

CCO

EEO

I

C

P

d

qJA

-50 V

-40 V

-5.0 V

-50 V

-50 V

-100 mA

200

625 K/W

-55 to +125 °C

mW

UNAPPROVED

NOT FOR

DISTRIBUTION

DS30142 Rev. 1P-5 1 of 2 DMDT9922

Electrical Characteristics

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Leakage Current

Emitter-Base Leakage Current

Collector-Emitter Leakage Current

ON CHARACTERISTICS (Note 2)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Impedance

Emitter-Base Offset Voltage

ADVANCE INFORMATION

Change in Emitter-Base Offset Voltage vs. Collector-Base
Voltage (CMRR)

Change in Emitter-Base Offset Voltage vs.
Collector-Current

Average Offset Voltage Drift

Emitter-Base Offset Current

Change in Emitter-Base Offset Current vs. Collector-Base
Voltage

Average Offset Current Drift

Collector-Collector Leakage Current

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Output Conductance

Current Gain-Bandwidth Product

@ TA= 25°C unless otherwise specified

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

I

CES

h

V

CE(SAT)

V

CE(SAT)

r

V

DV

DV

DV

DI

TC V

I

OS

DI
DV

TC I

I

CC

C

C

h

f

-50 ¾¾ V

-40 ¾¾ V

-5.0 ¾¾ V

¾ -0.3 -500 nA

¾¾-500 nA

¾ -4 -1000 nA

300 450 555 ¾

FE

¾
¾

be

OS

OS/

OS/

OS/

obo

ibo

OE

T

¾ -0.5 ¾W

¾ 10 ¾mV

¾ 10 ¾mV

CB

¾ 5 ¾mV

C

¾ 0.5 ¾mV/°C

OS

¾ 8 ¾ nA

¾ 30 ¾ nA

CB

¾ 50 ¾ pA/°C

OS

¾ 35 ¾ pA

¾¾70 pF

¾ 10 ¾mS

-0.1

-0.1

170 ¾ MHz

-0.5

¾

-4 15 pF

V
V

I

= -50mA, IE= 0

C

= -1.0mA, IB= 0

I

C

= -50mA, IC= 0

I

E

= -30V

V

CB

= -4.0V

V

EB

= -40V

V

CE

= -1.0mA, VCE= -6.0V

I

C

= -50mA, IB= -5.0mA

I

C

I

= -1mA, IB= -0.1mA

C

I

= -10mA to -1mA

C

= 0V, IC= -1mA to -1mA

V

CB

= 0V, IC= -1mA to -1mA

V

CB

= 0V, IC= -10mA to -1mA

V

CB

= -10mA to -1mA

I

C

= -10mA, VCB= 0V

I

C

= 0 to -50V

V

CB

I

= -10mA

C

= -40V

V

CE

= -10V, f = 1.0MHz, IE= 0

V

CB

= -0.5V, IC= 0, f = 1MHz

V

EB

= -1mA, VCE= -5V

I

C

= -12V, IC= -2.0mA,

V

CE

f = 100MHz

Notes: 1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

UNAPPROVED

NOT FOR

DISTRIBUTION

DS30142 Rev. 1P-5 2 of 2 DMDT9922