DIODS DMBT9022 Datasheet
Features
Epitaxial Planar Die Construction
·
Ideal for Medium Power Amplification and
·
Switching
High Current Gain
·
Mechanical Data
Case: SOT-23, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
NEW PRODUCT
Method 208
Terminal Connections: See Diagram
·
Marking: K1S
·
Weight: 0.008 grams (approx.)
·
DMBT9022
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-23
Dim Min Max
A
B
C
D
E
G
H
M
J
K
L
M
All Dimensions in mm
0.37 0.51
1.19 1.40
2.10 2.50
0.89 1.05
0.45 0.61
1.78 2.05
2.65 3.05
0.013 0.15
0.89 1.10
0.45 0.61
0.076 0.178
E
TOP VIEW
B
A
C
B
C
E
D
G
H
K
J
L
Maximum Ratings
Characteristic Symbol DMBT9022 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
@ TA= 25°C unless otherwise specified
@ TA= 25°C unless otherwise specified
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(SAT)
C
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j,TSTG
50 ¾ V
40 ¾ V
5.0 ¾ V
¾ 500 nA
¾ 500 nA
FE
obo
270 630 ¾
¾ 0.4 V
2.0 Typ. 3.5 pF
50 V
40 V
5.0 V
100 mA
225
556 K/W
-55 to +150 °C
I
= 50mA, IE= 0
C
= 1.0mA, IB= 0
I
C
I
= 50mA, IC= 0
E
= 30V
V
CB
= 4.0V
V
EB
= 1.0mA, VCE= 6.0V
I
C
= 50mA, IB= 5.0mA
I
C
= 12V, f = 1.0MHz, IE= 0
V
CB
mW
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30056 Rev. 2P-5 1 of 1 DMBT9022
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