DIODS DDTC144GE, DDTC124GE, DDTC114GE, DDTC115GE Datasheet

Features

DDTC (R2-ONLY SERIES) E

NPN PRE-BIASED SMALL SIGNAL SOT-523

SURFACE MOUNT TRANSISTOR

· Epitaxial Planar Die Construction

TCUDORPWEN

· Complementary PNP Types Available
(DDTA)

· Built-In Biasing Resistor, R2 only

Mechanical Data

· Case: SOT-523, Molded Plastic

· Case material - UL Flammability Rating 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking: Date Code and Marking Code

(See Diagrams & Page 2)

· Weight: 0.002 grams (approx.)

· Ordering Information (See Page 2)

P/N R2 (NOM) MARKING

DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE

10KW
22KW
47KW

100KW

N26
N27
N28
N29

SOT-523

A

C

C

TOP VIEW

B

K

J

B

E

G

H

N

D

L

M

C

Dim Min Max Typ

A

0.15 0.30 0.22

B

0.75 0.85 0.80

C

1.45 1.75 1.60

D

¾¾0.50

G

0.90 1.10 1.00

H

1.50 1.70 1.60

J

0.00 0.10 0.05

K

0.60 0.80 0.75

L

0.10 0.30 0.22

M

0.10 0.20 0.12

N

0.45 0.65 0.50

a

0° 8°¾

All Dimensions in mm

B

R

2

E

SCHEMATIC DIAGRAM

Maximum Ratings

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage and Temperature Range

Note: 1. Mounted on FR4 PC Board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.

@ TA= 25°C unless otherwise specified

V

CBO

V

CEO

V

EBO

IC (Max)

P

d

R

qJA

Tj,T

STG

50 V

50 V

5V

100 mA

150

833 °C/W

-55 to +150 °C

mW

DS30316 Rev. 3 - 1 1 of 3 DDTC (R2-ONLY SERIES) E

Electrical Characteristics

@ TA= 25°C unless otherwise specified

TCUDORPWEN

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Bleeder Resistor (R2) Tolerance

Gain-Bandwidth Product*

* Transistor - For Reference Only

Ordering Information

DDTC114GE-7

DDTC124GE-7

DDTC144GE-7

DDTC115GE-7

Characteristic Symbol Min Typ Max Unit Test Condition

DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE

DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE

BV

BV

BV

I

I

V

CE(sat)

h

DR

CBO

CEO

EBO

CBO

EBO

FE

f

T

50 ¾¾V

50 ¾¾V

5 ¾

¾

¾¾0.5 mA

300
140

65
30

580
260

¾

130

58

¾¾0.3 V

30
56
68

¾¾¾

82

2

-30 ¾ +30 %

¾ 250 ¾ MHz

= 50mA

I

C

IC = 1mA

= 720mA, DDTC114GE

I

E

I

= 330mA, DDTC124GE

E

V

I

= 160mA, DDTC144GE

E

I

= 72mA, DDTC115GE

E

VCB = 50V

VEB = 4V

mA

I

= 10mA, IB = 0.5mA

C

IC = 5mA, VCE = 5V

VCE = 10V, IE = -5mA,
f = 100MHz

¾

(Note 2)

Device

Packaging Shipping

SOT-523 3000/Tape & Reel

SOT-523 3000/Tape & Reel

SOT-523 3000/Tape & Reel

SOT-523 3000/Tape & Reel

Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

XXX = Product Type Marking Code (See Page 1, e.g. N26 = DDTC114GE)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)

2007 2008 2009

Aug Sep Oct Nov Dec

89 OND

Date Code Key

Year 2002 2003 2004 2005 2006

Code

Month Jan Feb March Apr May Jun Jul

Code

XXXYM

NPRST

12345 67

UVW

DS30316 Rev. 3 - 1 2 of 3 DDTC (R2-ONLY SERIES) E