DIODS DDC144EK, DDC124EK, DDC123JK, DDC114YK, DDC114TK Datasheet
...
Features
DDC (xxxx) K
NPN PRE-BIASED SMALL SIGNAL SOT-26
DUAL SURFACE MOUNT TRANSISTOR
· Epitaxial Planar Die Construction
TCUDORPWEN
· Complementary PNP Types Available
(DDA)
· Built-In Biasing Resistors
Mechanical Data
· Case: SOT-26, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: Date Code and Marking Code
(See Diagrams & Page 3)
· Weight: 0.015 grams (approx.)
· Ordering Information (See Page 3)
P/N R1 R2 MARKING
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC143TK
DDC114TK
22KW
47KW
10KW
2.2KW
10KW
4.7KW
10KW
22KW
47KW
47KW
47KW
10KW
-
-
N17
N20
N14
N06
N13
N07
N12
K
J
A
NXX YM
G
H
D
R
NXX YM
C
B
L
R
R
1
2
R
2
1
R1, R
2
SCHEMATIC DIAGRAM
SOT-26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
G
M
H
J
K
L
M
a
All Dimensions in mm
R
1
R
1
R1 Only
0.95
1.90
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
0° 8°¾
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1) DDC124EK
DDC123JK
Output Current DDC124EK
Output Current All
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 200mW per element must not be exceeded.
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
DDC144EK
DDC114YK
DDC114EK
DDC143TK
DDC114TK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC143TK
DDC114TK
V
CC
V
IN
I
O
IC (Max)
P
d
R
qJA
Tj,T
STG
50 V
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-5 Vmax
-5 Vmax
30
30
70
100
50
100
100
100 mA
300
416.7 °C/W
-55 to +150 °C
V
mA
mW
DS30348 Rev. 2 - 2 1 of 5 DDC (xxxx) K
Electrical Characteristics
TCUDORPWEN
Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product*
@ TA= 25°C unless otherwise specified
BV
BV
BV
I
I
V
CE(sat)
h
DR
CBO
CEO
EBO
CBO
EBO
FE
f
T
50 ¾¾ V
50 ¾¾ V
5 ¾¾ V
¾¾0.5 mA
¾¾0.5 mA
¾¾0.3 V
100 250 600 ¾
-30 ¾ +30 %
1
¾ 250 ¾ MHz
IC/IB = 2.5mA / 0.25mA DDC143TK
IC/IB = 1mA / 0.1mA DDC114TK
IC = 1mA, VCE = 5V
= 10V, IE = -5mA, f = 100MHz
V
CE
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
DDC124EK
DDC144EK
DDC114YK
DDC123JK
DDC114EK
V
V
V
I
R
l(off)
l(on)
O(on)
I
l
O(off)
G
DR
2/R1
f
T
l
1
0.5
0.5
0.3
0.5
0.5
¾
¾ 0.1
1.1
1.1
¾
¾
1.1
1.9
1.9
--
--
1.9
¾
3.0
3.0
1.4
1.1
3.0
0.3
V
V
0.36
0.18
¾¾
0.88
mA
3.6
0.88
¾¾0.5 mA
56
68
68
¾¾¾
80
30
-30 ¾ +30 %
-20 ¾ +20 %
¾ 250 ¾ MHz
V
= 5V, IO = 100mA
CC
V
= 0.3, IO = 5mA
O
= 0.3, IO = 2mA
V
O
VO = 0.3, IO = 1mA
VO = 0.3, IO = 5mA
VO = 0.3, IO = 10mA
I
= 10mA / 0.5mA
O/Il
= 10mA / 0.5mA
I
O/Il
I
= 5mA / 0.25mA
O/Il
= 5mA / 0.25mA
I
O/Il
= 10mA / 0.5mA
I
O/Il
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
= 5V, IO = 5mA
V
O
V
= 5V, IO = 10mA
O
VO = 5V, IO = 10mA
= 5V, IO = 5mA
V
O
= 10V, IE = 5mA,
V
CE
f = 100MHz
* Transistor - For Reference Only
I
= 50mA
C
IC = 1mA
= 50mA
I
E
V
= 50V
CB
VEB = 4V
¾
¾
¾
DS30348 Rev. 2 - 2 2 of 5 DDC (xxxx) K
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