Features
DDA (xxxx) U
PNP PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
· Epitaxial Planar Die Construction
TCUDORPWEN
· Built-In Biasing Resistors
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: Date Code and Marking Code
(See Diagrams & Page 3)
· Weight: 0.006 grams (approx.)
· Ordering Information (See Page 3)
P/N R1 R2 MARKING
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
22KW
47KW
10KW
2.2KW
10KW
4.7KW
10KW
22KW
47KW
47KW
47KW
10KW
-
-
P17
P20
P14
P06
P13
P07
P12
K
J
A
PXX YM
G
H
D
R
PXX YM
C
B
L
F
R
R
1
2
R
2
1
R1, R
2
SCHEMATIC DIAGRAM
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
J
K
L
M
a
1
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
0° 8°
M
All Dimensions in mm
R
R
1
R1 Only
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1) DDA124EU
DDA123JU
Output Current DDA124EU
Output Current All
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 150mW per element must not be exceeded.
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
DDA144EU
DDA114YU
DDA114EU
DDA143TU
DDA114TU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
V
CC
V
IN
I
O
IC (Max)
P
d
R
qJA
Tj,T
STG
50 V
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
-30
-30
-70
-100
-50
-100
-100
-100 mA
200
625 °C/W
-55 to +150 °C
V
mA
mW
DS30346 Rev. 2 - 2 1 of 5 DDA (xxxx) U
Electrical Characteristics
TCUDORPWEN
Characteristic (DDA143TU & DDA114TU only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product*
@ TA= 25°C unless otherwise specified
BV
BV
BV
I
I
V
CE(sat)
h
DR
CBO
EBO
f
-50 ¾¾ V
CBO
-50 ¾¾ V
CEO
EBO
-5 ¾¾ V
¾¾-0.5 mA
¾¾-0.5 mA
¾¾-0.3 V
100 250 600 ¾
FE
-30 ¾ +30 %
1
T
¾ 250 ¾ MHz
IC/IB = -2.5mA / -0.25mA DDA143TU
IC/IB = -1mA / -0.1mA DDA114TU
IC = -1mA, VCE = -5V
= -10V, IE = 5mA, f = 100MHz
V
CE
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
V
V
I
R
l(off)
l(on)
O(on)
I
l
O(off)
G
DR
2/R1
f
T
l
1
-0.5
-0.5
-0.3
-0.5
-0.5
¾
-1.1
-1.1
--
--
-1.1
-1.9
-1.9
--
--
-1.9
¾
-3.0
-3.0
-1.4
-1.1
-3.0
¾ -0.1 -0.3 V
-0.36
-0.18
¾¾
-0.88
-3.6
-0.88
¾¾-0.5 mA
56
68
68
¾¾¾
80
30
-30 ¾ +30 %
-20 ¾ +20 %
¾ 250 ¾ MHz
V
= -5V, IO = -100mA
CC
V
mA
= -0.3, IO = -5mA
V
O
VO = -0.3, IO = -2mA
V
= -0.3, IO = -1mA
O
= -0.3, IO = -5mA
V
O
VO = -0.3, IO = -10mA
I
= -10mA / -0.5mA
O/Il
= -10mA / -0.5mA
I
O/Il
I
= -5mA / -0.25mA
O/Il
= -5mA / -0.25mA
I
O/Il
IO/Il = -10mA / -0.5mA
VI = -5V
= -50V, VI = -0V
V
CC
VO = -5V, IO = -5mA
= -5V, IO = -5mA
V
O
V
= -5V, IO = -10mA
O
VO = -5V, IO = -10mA
= -5V, IO = -5mA
V
O
= -10V, IE = -5mA,
V
CE
f = 100MHz
I
= -50mA
C
IC = -1mA
= -50mA
I
E
V
= -50V
CB
VEB = -4V
¾
¾
¾
* Transistor - For Reference Only
DS30346 Rev. 2 - 2 2 of 5 DDA (xxxx) U