DIODS CTA2P1N-7 Datasheet
Features
Combines MMBT4403 type transistor with 2N7002
·
type MOSFET
Small Surface Mount Package
·
NPN/P-Channel Complement Available: CTA2N1P
·
Mechanical Data
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
NEW PRODUCT
Method 208
Case material - UL Flammability Rating
·
Classification 94V-0
Terminal Connections: See Diagram
·
Marking: A80
·
· Weight: 0.006 grams (approx.)
Q1
CTA2P1N
COMPLEX TRANSISTOR ARRAY
SOT-363
A
C
A80
H
K
J
G
C
Q1
S
Q2
Q2
B
L
FD
Dim Min Max
A
B
C
D
F
H
J
M
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Q2
E
B
Q1
Maximum Ratings, Total Device
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
D
Q1
Q2
@ TA= 25°C unless otherwise specified
P
d
R
qJA
T
j,TSTG
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
V
CBO
V
CEO
V
EBO
I
C
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage RGS£ 1.0MW
Gate-Source Voltage Continuous
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
Pulsed
V
DSS
V
DGR
V
GSS
I
D
150
833 °C/W
-55 to +150 °C
@ TA= 25°C unless otherwise specified
-40 V
-40 V
-5.0 V
-600 mA
@ TA= 25°C unless otherwise specified
60 V
60 V
±20
±40
115
73
800
mW
V
mA
DS30296 Rev. 2 - 2 1 of 4 CTA2P1N
Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
-40 ¾ V
-40 ¾ V
-5.0 ¾ V
¾ -100 nA
BL
FE
cb
eb
ie
re
fe
oe
f
T
t
d
t
r
t
s
t
f
¾ -100 nA
30
60
100
100
20
¾
-0.75
¾
¾
¾
¾
300
¾
-0.40
-0.75
-0.95
-1.30
¾ 8.5 pF
¾ 30 pF
1.5 15 kW
0.1 8.0 x 10
60 500 ¾
1.0 100 mS
200 ¾ MHz
¾ 15 ns
¾ 20 ns
¾ 225 ns
¾ 30 ns
I
= -100mA, IE= 0
C
= -1.0mA, IB= 0
I
C
= -100mA, IC= 0
I
E
= -35V, V
V
CE
= -35V, V
V
CE
I
= -100µA, VCE= -1.0V
C
I
= -1.0mA, VCE= -1.0V
C
IC= -10mA, VCE= -1.0V
¾
I
= -150mA, VCE= -2.0V
C
I
= -500mA, VCE= -2.0V
C
= -150mA, IB= -15mA
I
C
V
I
= -500mA, IB= -50mA
C
= -150mA, IB= -15mA
I
C
V
I
= -500mA, IB= -50mA
C
= -10V, f = 1.0MHz, IE= 0
V
CB
= -0.5V, f = 1.0MHz, IC= 0
V
EB
-4
V
= -10V, IC= -1.0mA,
CE
f = 1.0kHz
= -10V, IC= -20mA,
V
CE
f = 100MHz
= -30V, IC= -150mA,
V
CC
V
BE(off)
= -30V, IC= -150mA,
V
CC
IB1= IB2= -15mA
= -0.4V
EB(OFF)
= -0.4V
EB(OFF)
= -2.0V, IB1= -15mA
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC= 25°C
@ T
= 125°C
C
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
60 70 ¾ V
¾¾
1.0
500
µA
¾¾±10 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj= 25°C
@T
= 125°C
j
On-State Drain Current
Forward Transconductance
V
GS(th)
R
DS (ON)
I
D(ON)
g
1.0 ¾ 2.0 V
¾
3.2
4.4
0.5 1.0 ¾ A
FS
80 ¾¾mS
7.5
13.5
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
¾ 22 50 pF
¾ 11 25 pF
¾ 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t
D(ON)
t
D(OFF)
¾ 7.0 20 ns
¾ 11 20 ns
Note: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
= 0V, ID= 10mA
V
GS
= 60V, VGS= 0V
V
DS
= ±20V, VDS= 0V
V
GS
V
DS=VGS
V
GS
, ID=-250mA
= 5.0V, ID= 0.05A
VGS= 10V, ID= 0.5A
= 10V, VDS= 7.5V
V
GS
=10V, ID= 0.2A
V
DS
= 25V, VGS= 0V
V
DS
f = 1.0MHz
V
= 30V, ID= 0.2A,
DD
R
= 150W,V
L
R
GEN
= 25W
GEN
= 10V,
DS30296 Rev. 2 - 2 2 of 4 CTA2P1N
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