DIODS CTA2N1P-7 Datasheet
Features
Combines MMBT4401 type transistor with BSS84 type
·
MOSFET
Small Surface Mount Package
·
PNP/N-Channel Complement Available: CTA2P1N
·
Mechanical Data
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
NEW PRODUCT
Method 208
Case material - UL Flammability Rating
·
Classification 94V-0
Terminal Connections: See Diagram
·
Marking: A03
·
· Weight: 0.006 grams (approx.)
C
Q1
Q1
CTA2N1P
COMPLEX TRANSISTOR ARRAY
SOT-363
A
C
A03
H
K
G
S
Q2
Q2
J
B
L
FD
Dim Min Max
A
B
C
D
F
H
J
M
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Q2
E
B
Q1
Maximm Ratings, Total Device
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
D
Q1
Q2
@ TA= 25°C unless otherwise specified
R
T
j,TSTG
P
d
qJA
150
833 °C/W
-55 to +150 °C
Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor Element
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage RGS£ 1.0MW
Gate-Source Voltage Continuous
Drain Current Continuous
V
CBO
V
CEO
V
EBO
I
C
V
DSS
V
DGR
V
GSS
I
D
60 V
40 V
6.0 V
600 mA
@ TA= 25°C unless otherwise specified
-50 V
-50 V
±20 V
-130
mW
@ TA= 25°C unless otherwise specified
mA
DS30295 Rev. A-2 1 of 3 CTA2N1P
Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
f
60 ¾ V
40 ¾ V
6.0 ¾ V
¾ 100 nA
BL
FE
cb
eb
ie
re
fe
oe
T
t
d
t
r
t
s
t
f
¾ 100 nA
20
40
80
100
40
¾
0.75
¾
¾
¾
¾
300
¾
0.40
0.75
0.95
1.2
¾ 6.5 pF
¾ 30 pF
1.0 15 kW
0.1 8.0 x 10
40 500 ¾
1.0 30 mS
250 ¾ MHz
¾ 15 ns
¾ 20 ns
¾ 225 ns
¾ 30 ns
¾
V
V
= 100mA, IE= 0
I
C
= 1.0mA, IB= 0
I
C
I
= 100mA, IC= 0
E
V
= 35V, V
CE
= 35V, V
V
CE
I
= 100µA, VCE= 1.0V
C
I
= 1.0mA, VCE= 1.0V
C
I
= 10mA, VCE= 1.0V
C
I
= 150mA, VCE= 1.0V
C
I
= 500mA, VCE= 2.0V
C
= 150mA, IB= 15mA
I
C
I
= 500mA, IB= 50mA
C
= 150mA, IB= 15mA
I
C
I
= 500mA, IB= 50mA
C
= 5.0V, f = 1.0MHz, IE= 0
V
CB
= 0.5V, f = 1.0MHz, IC= 0
V
EB
-4
V
= 10V, IC= 1.0mA,
CE
f = 1.0kHz
= 10V, IC= 20mA,
V
CE
f = 100MHz
V
= 30V, IC= 150mA,
CC
V
BE(off)
= 30V, IC= 150mA,
V
CC
I
= IB2= 15mA
B1
= 0.4V
EB(OFF)
= 0.4V
EB(OFF)
= 2.0V, IB1= 15mA
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
= 0V, ID= -250µA
µA
µA
nA
V
GS
V
= -50V, VGS= 0V, TJ= 25°C
DS
= -50V, VGS= 0V, TJ= 125°C
V
DS
V
= -25V, VGS= 0V, TJ= 25°C
DS
= ±20V, VDS= 0V
V
GS
V
DS=VGS
V
GS
V
DS
V
DS
f = 1.0MHz
V
DD
R
GEN
, ID= -1mA
= -5V, ID= 0.100A
= -25V, ID= 0.1A
= -25V, VGS= 0V
= -30V, ID= -0.27A,
= 50W,VGS= -10V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
-50 ¾¾V
DSS
¾
¾
¾
¾¾±10 nA
¾
-15
-60
¾
-100
¾
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
GS(th)
R
DS (ON)
g
-0.8 ¾ -2.0 V
¾¾10 W
FS
.05 ¾¾S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
¾¾45 pF
¾¾25 pF
¾¾12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t
D(ON)
t
D(OFF)
¾ 10 ¾ ns
¾ 18 ¾ ns
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. A-2 2 of 3 CTA2N1P
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