DIODS BYT40Y Datasheet
Features
Hermetically Sealed Glass Body Construction
·
High Voltage to 1600V with Low Leakage
·
Surge Overload Rating to 25A Peak
·
BYT40Y
1.0A HIGH VOLTAGE GLASS BODY RECTIFIER
A A
B
Mechanical Data
Case: DOT-30B, Glass
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
Polarity: Cathode Band
·
Marking: Type Number
·
Weight: 0.50 grams (approx.)
·
Maximum Ratings and Electrical Characteristics
Characteristic Symbol BYT40Y Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TA= 40°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage @ IF= 1.0A
Peak Reverse Leakage Current @ Tj= 25°C
at Rated DC Blocking Voltage @ T
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
= 150°C
j
V
V
V
R(RMS)
I
V
I
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
t
rr
C
qJA
D
DOT-30B
Dim Min Max
A
B
C
D
All Dimensions in mm
@Tj= 25°C unless otherwise specified
j
26.0 ¾
¾ 4.2
¾ 0.82
¾ 3.0
1600 V
1130 V
1.0 A
25 A
1.3 V
5.0
150
3.0 ms
6.0 pF
60
-55 to +150 °C
C
mA
K/W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 10mm from the case.
2. Measured with I
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
= 0.5A, IR= 1.0A, Irr= 0.25A. See Figure 5.
F
DS30032 Rev. B-5 1 of 2 BYT40Y
1.2
g
1.0
10
g
1000
g
g
1
0.8
1
O
I , AVERAGE RECTIFIED CURRENT (A)
µ
R
I , REVERSE CURRENT ( A)
0.6
0.4
0.2
100
10
0.1
T = 25 Cj°
0.01
F
I , INSTANTANEOUS FWD CURRENT (A)
0
2505075100 125 150
T , AMBIENT TEMPERATURE ( C)
A
Fi
. 1 Forward Current DeratingCurve
°
0.001
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
0.4 0.8 1.2 1.6 2.0
F
Fi
.2 Typical Forward Characteristics
4
12
f = 1.0MHz
°
T = 25 C
j
10
8
6
4
1
JUNCTION CAPACITANCE
j
C , (pF)
2
V=V
0.1
Device
Under
Test
1.0NIΩ
75
Oscilloscope
(Note 1)
0
25 50
T, ( C)
JUNCTION TEMPERATURE °
j
Fi
.3 Typical Reverse Characteristics
50 NI (Non-inductive)Ω
(+)
50V DC
Approx
(-)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .ΩΩ
R RRM
100 150125
10 NIΩ
Generator
(Note 2)
Fig. 5 Reverse RecoveryTime Characteristic and Test Circuit
(-)
Pulse
(+)
0
+0.5A
0A
-0.25A
-1.0A
10.1 10 100
V , (V)
REVERSE VOLTAGE
R
Fi
.4 Typical Junction Capacitance
t
rr
Set time base for 50/100 ns/cm
DS30032 Rev. B-5 2 of 2 BYT40Y
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