DIODS BSS84DW Datasheet

Features

Low On-Resistance

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Mechanical Data

Case: SOT-363, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections: See Diagram

·

Marking: KXX: Product marking code

·

Marking Code: K84

·

Weight: 0.006 grams (approx.)

·

YY: Date code

K

J

A

G

D

1

2

KXX YY

G2D

S

2

H

D

G

2

1

BSS84DW

DUAL P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

SOT-363

Dim Min Max

A

S

1

C

B

KXX YY

1

M

L

FD

S

1

All Dimensions in mm

B

C

D

F

H

J

K

L

M

0.10 0.30

1.15 1.35

2.00 2.20

0.65 Nominal

0.30 0.40

1.80 2.20

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

S

2

Maximum Ratings

@ TA= 25°C unless otherwise specified

Characteristic Symbol BSS84DW Units

Drain-Source Voltage

Drain-Gate Voltage (Note 3)

Gate-Source Voltage Continuous

Drain Current (Note 1) Continuous

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

V

V

V

R

T

j,TSTG

DSS

DGR

GSS

I

D

P

qJA

d

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width £ 300ms, duty cycle £ 2%.

3. R

£ 20KW.

GS

D

G

1

2

-50 V

-50 V

±20 V

-130

mA

200 mW

625 °C/W

-55 to +150

°C

DS30204 Rev. C-2 1 of 2 BSS84DW

Electrical Characteristics

@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Drain-Source Breakdown Voltage

BV

-50 -75 ¾ VV

DSS

¾

Zero Gate Voltage Drain Current

I

DSS

¾
¾

Gate-Body Leakage

I

GSS

¾¾±10 nA V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

GS(th)

R

DS (ON)

g

-0.8 -1.6 -2.0 V

¾ 610W

.05 ¾¾S

FS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

¾¾45 pF

¾¾25 pF

¾¾12 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

t

D(ON)

t

D(OFF)

¾ 10 ¾ ns

¾ 18 ¾ ns

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width £ 300ms, duty cycle £ 2%.

3. R

£ 20KW.

GS

= 0V, ID= -250mA

GS

V

-15

-60

µA
µA

nA

¾
¾
¾

-100

= -50V, VGS= 0V, TJ= 25°C

DS

V

= -50V, VGS= 0V, TJ= 125°C

DS

V

= -25V, VGS= 0V, TJ= 25°C

DS

= ±20V, VDS= 0V

GS

V

DS=VGS

V

GS

V

DS

V

DS

f = 1.0MHz

V

DD

R

GEN

, ID= -1mA

= -5V, ID= 0.100A

= -25V, ID= 0.1A

= -25V, VGS= 0V

= -30V, ID= -0.27A,

= 50W,VGS= -10V

DS30204 Rev. C-2 2 of 2 BSS84DW