DIODS BSS84-7 Datasheet

Features

Drai

BSS84

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

· Low On-Resistance

· Low Gate Threshold Voltage

· Low Input Capacitance

· Fast Switching Speed

· Low Input/Output Leakage

Mechanical Data

· Case: SOT-23, Molded Plastic

· Case material - UL Flammability Rating 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking (See Page 2): K84

· Ordering & Date Code Information: See Page 2

· Weight: 0.008 grams (approx.)

Maximum Ratings

Characteristic Symbol BSS84 Units

Drain-Source Voltage

Drain-Gate Voltage RGS£ 20KW

Gate-Source Voltage Continuous

Drain Current (Note 1) Continuous

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

@ TA = 25°C unless otherwise specified

E

G

T

D

TOP VIEW

G

H

Gate

V

DSS

V

DGR

V

GSS

I

D

P

d

R

qJA

j,TSTG

A

B

C

S

D

J

n

Source

K

L

M

SOT-23

Dim Min Max

A

0.37 0.51

B

1.20 1.40

C

2.30 2.50

D

0.89 1.03

E

0.45 0.60

G

1.78 2.05

H

2.80 3.00

J

0.013 0.10

K

0.903 1.10

L

0.45 0.61

M

0.085 0.180

a

0° 8°

All Dimensions in mm

-50 V

-50 V

±20 V

-130

mA

300 mW

417 °C/W

-55 to +150

°C

Electrical Characteristics

@ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

= 0V, ID = -250µA

µA
µA

nA

V

GS

= -50V, VGS = 0V, TJ= 25°C

V

DS

= -50V, VGS = 0V, TJ= 125°C

V

DS

V

= -25V, VGS = 0V, TJ= 25°C

DS

= ±20V, VDS= 0V

V

GS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

-50 ¾¾V

DSS

¾
¾
¾

¾¾±10 nA

-15

¾
¾

-60

¾

-100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

GS(th)

R

DS (ON)

g

-0.8 ¾ -2.0 V

¾¾10 W

FS

.05 ¾¾S

VDS=VGS, ID = -1mA

VGS = -5V, ID = 0.100A

= -25V, ID = 0.1A

V

DS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

¾¾45 pF

¾¾25 pF

¾¾12 pF

= -25V, VGS= 0V

V

DS

f = 1.0MHz

SWITCHING CHARACTERISTICS

t

D(ON)

t

D(OFF)

¾ 10 ¾ ns

¾ 18 ¾ ns

= -30V, ID = -0.27A,

V

DD

= 50W,VGS= -10V

R

GEN

Turn-On Delay Time

Turn-Off Delay Time

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30149 Rev. 5 - 2 1 of 2 BSS84

www.diodes.com

Ordering Information

(Note 3)

Device

BSS84-7

Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

SOT-23 3000/Tape & Reel

Marking Information

K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002

YM

M = Month ex: 9 = September

2005 2006 2007 2008 2009

ST U VW

Aug Sep Oct Nov Dec

89 O ND

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004

Code

Month Jan Feb March Apr May Jun Jul

Code

K84

JKLMNPR

1234567

DS30149 Rev. 5 - 2 2 of 2 BSS84

www.diodes.com