DIODS BSS138W Datasheet

Features
Drai
· Low On-Resistance
· Low Gate Threshold Voltage
· Fast Switching Speed
Mechanical Data
· Case: SOT-323, Molded Plastic
· Case Material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking Code (See Page 2): K38
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approx.)
Maximum Ratings
Characteristic Symbol BSS138W Units
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage Continuous
Drain Current (Note 2) Continuous
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@ TA = 25°C unless otherwise specified
BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
A
D
C
B
G
K
J
Gate
V
V
V
R
T
j,TSTG
DSS
DGR
GSS
I
D
P
qJA
S
G
H
M
L
ED
n
Source
50 V
50 V
±20 V
200
d
200 mW
625 °C/W
-55 to +150
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
0° 8°
All Dimensions in mm
mA
°C
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
50 75 ¾ V
DSS
¾¾0.5
¾¾±100 nA
µA
= 0V, ID = 250mA
V
GS
V
= 50V, VGS = 0V
DS
VGS = ±20V, VDS= 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
GS(th)
R
DS (ON)
g
0.5 1.2 1.5 V
¾ 1.4 3.5 W
100 ¾¾mS
FS
V
DS=VGS
VGS = 10V, ID = 0.22A
VDS=25V, ID = 0.2A, f = 1.0KHz
, ID = -250mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
¾¾50 pF
¾¾25 pF
¾¾8.0 pF
V
= 10V, VGS= 0V
DS
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Note: 1. RGS£ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
t
D(ON)
t
D(OFF)
¾¾20 ns
¾¾20 ns
VDD= 30V, ID = 0.2A,
= 50W
R
GEN
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30206 Rev. 3 - 2 1 of 5 BSS138W
www.diodes.com
Ordering Information
0.8
0.6
(Note 4)
Device
BSS138W-7
Packaging Shipping
SOT-323 3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
YM
2005 2006 2007 2008 2009
ST U VW
Aug Sep Oct Nov Dec
89 OND
V = 3.5V
GS
V = 3.25V
GS
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004
Code
Month Jan Feb March Apr May Jun Jul
Code
K38
JKLMNPR
1234 567
T = 25°C
j
0.5
0.7
0.6
0.5
0.4
0.3
D
I , DRAIN-SOURCE CURRENT (A)
0.4
0.3
0.2
0.1
0
0
2
1
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
3
V , DRAIN-SOURCE VOLTAGE (V)
DS
5
4
6
V = 1V
DS
7
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
9
8
10
-55°C
25°C
150°C
0.2
D
I , DRAIN-SOURCE CURRENT (A)
0.1
0
0
0.5
1.5
1
V , GATE-SOURCE VOLTAGE (V)
GS
2
2.5
3.5
3
4
4.5
Fig. 2 Transfer Characteristics
DS30206 Rev. 3 - 2 2 of 5 BSS138W
www.diodes.com
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