DIODS BSS123W Datasheet
Features
Drai
TCUDORPWEN
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· High Drain-Source Voltage Rating
Mechanical Data
· Case: SOT-323, Molded Plastic
· Plastic Material - UL Flammability Classification
Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K23 (See Page 3)
· Weight: 0.006 grams (approx.)
BSS123W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
A
D
B
C
G
H
Gate
S
M
L
ED
n
G
K
J
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
All Dimensions in mm
0° 8°
Source
Maximum Ratings
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage RGS£ 20KW
Gate-Source Voltage Continuous
Drain Current (Note 1) Continuous
Pulsed
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
@ TA = 25°C unless otherwise specified
V
V
V
I
R
T
j,TSTG
DSS
DGR
GSS
I
D
DM
P
qJA
100 V
100 V
±20 V
170
680
d
200 mW
625 °C/W
-55 to +150
mA
°C
DS30368 Rev. 2 - 2 1 of 3 BSS123W
www.diodes.com
Electrical Characteristics
2
0
TCUDORPWEN
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
@ TA = 25°C unless otherwise specified
BV
I
I
GSSF
V
GS(th)
R
DS (ON)
g
V
C
C
C
t
D(ON)
t
D(OFF)
DSS
100 ¾¾V
DSS
¾¾
¾¾50 nA
0.8 1.4 2.0 V
¾
¾
FS
SD
oss
rss
t
t
80 370 ¾ mS
¾ 0.84 1.3 V
¾ 29 60 pF
iss
¾ 10 15 pF
¾ 26pF
¾¾ 8ns
r
¾¾16 ns
f
¾¾ 8ns
¾¾13 ns
= 0V, ID = 250mA
V
GS
V
1.0
10
µA
nA
= 100V, VGS = 0V
DS
= 20V, VGS = 0V
V
DS
VGS = 20V, VDS= 0V
V
DS=VGS
¾
6.0
¾
10
V
GS
W
V
GS
, ID = 1mA
= 10V, ID = 0.17A
= 4.5V, ID = 0.17A
VDS= 10V, ID = 0.17A, f = 1.0KHz
VGS = 0V, IS = 0.34A
= 25V, VGS= 0V
V
DS
f = 1.0MHz
= 30V, ID = 0.28A,
V
DD
R
= 50W, VGS = 10V
GEN
Notes: 2. Short duration test pulse used to minimize self-heating effect.
.7
0.6
V = 10, 7, 6, 5V
GS
0.5
V = 4V
GS
0.4
0.3
V = 3V
GS
0.2
D
I , DRAIN-SOURCE CURRENT (A)
0.1
0
0
1
V , DRAIN-SOURCE VOLTAGE (V)
DS
2
3
4
Fig. 1 On-Region Characteristics
.4
2.0
V=4V
V=3V
GS
1.6
DS(ON)
R , NORMALIZED
1.2
DRAIN-SOURCE ON-RESISTANCE
0.8
0.1 0.2
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 2 On-Resistance Variation with Gate Voltage
0.30.4 0.50.6
and Drain-Source Current
GS
V = 5, 6, 7, 10V
GS
DS30368 Rev. 2 - 2 2 of 3 BSS123W
www.diodes.com
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