DIODS BSS123-7 Datasheet
Features
Drai
TCUDORPWEN
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· High Drain-Source Voltage Rating
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K23 (See Page 3)
· Ordering & Date Code Information: See Page 3
· Weight: 0.008 grams (approx.)
BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
a
All Dimensions in mm
0° 8°
E
G
D
TOP VIEW
G
H
Gate
A
B
C
S
D
K
J
L
n
M
Source
Maximum Ratings
Characteristic Symbol BSS123 Units
Drain-Source Voltage
Drain-Gate Voltage RGS£ 20KW
Gate-Source Voltage Continuous
Drain Current (Note 1) Continuous
Pulsed
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
@ TA = 25°C unless otherwise specified
V
V
V
I
R
Tj,T
DSS
DGR
GSS
I
D
DM
P
qJA
d
STG
100 V
100 V
±20 V
170
680
300 mW
417 °C/W
-55 to +150
mA
°C
DS30366 Rev. 3 - 2 1 of 3 BSS123
www.diodes.com
Electrical Characteristics
0
2
TCUDORPWEN
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
@ TA = 25°C unless otherwise specified
BV
I
I
GSSF
V
GS(th)
R
DS (ON)
g
V
C
C
C
t
D(ON)
t
D(OFF)
DSS
100 ¾¾V
DSS
¾¾
¾¾50 nA
0.8 1.4 2.0 V
¾
¾
FS
SD
iss
oss
rss
t
t
80 370 ¾ mS
¾ 0.84 1.3 V
¾ 29 60 pF
¾ 10 15 pF
¾ 26pF
¾¾ 8ns
r
¾¾16 ns
f
¾¾ 8ns
¾¾13 ns
= 0V, ID = 250mA
V
GS
V
1.0
10
µA
nA
= 100V, VGS = 0V
DS
= 20V, VGS = 0V
V
DS
VGS = 20V, VDS= 0V
V
DS=VGS
¾
6.0
¾
10
V
GS
W
V
GS
, ID = 1mA
= 10V, ID = 0.17A
= 4.5V, ID = 0.17A
VDS= 10V, ID = 0.17A, f = 1.0KHz
VGS = 0V, IS = 0.34A
= 25V, VGS= 0V
V
DS
f = 1.0MHz
= 30V, ID = 0.28A,
V
DD
R
= 50W,VGS = 10V
GEN
Note: 2. Short duration test pulse used to minimize self-heating effect.
.7
0.6
V = 10, 7, 6, 5V
GS
0.5
V = 4V
GS
0.4
0.3
V = 3V
GS
0.2
D
I , DRAIN-SOURCE CURRENT (A)
0.1
0
0
1
V , DRAIN-SOURCE VOLTAGE (V)
DS
2
3
4
Fig. 1 On-Region Characteristics
.4
2.0
V=4V
V=3V
GS
1.6
DS(ON)
R , NORMALIZED
1.2
DRAIN-SOURCE ON-RESISTANCE
0.8
0.1 0.2
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 2 On-Resistance Variation with Gate Voltage
0.30.4 0.50.6
and Drain-Source Current
GS
V = 5, 6, 7, 10V
GS
DS30366 Rev. 3 - 2 2 of 3 BSS123
www.diodes.com
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